Abstract: A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping material of at least 1018 cm?3 is provided, and a silicon carbide layer with a second doping material of the same charge carrier type in the range of 1014 and 1017 cm?3 is homo-epitaxially deposited on the substrate. A third doping material with a complimentary charge carrier is inserted, and structured with the aid of a diffusion and/or ion implantation, on the silicon carbide layer surface that is arranged far from the substrate to form pn junctions. Subsequently the component is subjected to a first temperature treatment between 1400° C. and 1700° C. Following this temperature treatment, a first metal coating is deposited on the implanted surface in order to form a Schottky contact and then a second metal coating is deposited in order to form an ohmic contact.

Abstract: A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping material of at least 1018 cm−3 is provided, and a silicon carbide layer with a second doping material of the same charge carrier type in the range of 1014 and 1017 cm−3 is homo-epitaxially deposited on the substrate. A third doping material with a complimentary charge carrier is inserted, and structured with the aid of a diffusion and/or ion implantation, on the silicon carbide layer surface that is arranged far from the substrate to form pn junctions. Subsequently the component is subjected to a first temperature treatment between 1400° C. and 1700° C.

Abstract: The invention relates to a semiconductor component with adjacent Schottky (5) and pn (9) junctions positioned in a drift area (2, 10) of a semiconductor material. The invention also relates to a method for producing said semiconductor component.

Abstract: A semiconductor component having impurity atoms introduced by implantation which are subsequently electrically activated by way of an annealing process. Immediately after the annealing process, the component has a mean surface roughness of less than 15 nm and at least 10% of the implanted impurity atoms are electrically activated.

Abstract: A semiconductor component with at least one lateral semiconductor structure with a high breakdown voltage including a substrate, a dielectric layer adjoining the substrate, a low-doped semiconductor zone disposed on the dielectric layer and heavily doped semiconductor zones of the semiconductor component which project into the low-doped semiconductor zone from the direction of the outer surface of the semiconductor component. Fixed charges, which reduce the electrical field strength in the blocking component of the lateral structure, are embedded inside the dielectric layer adjoining the substrate at least opposite that area of the low-doped semiconductor zone which, in the blocking state of the semiconductor component, has a high voltage in respect to the substrate.

Abstract: A semiconductor structure having one or a plurality of lateral, high-blocking semiconductor components in a semiconductor of a metalized substrate (2), a dielectric layer (3) contiguous to the substrate, a homogeneously doped drift zone (4) disposed above the dielectric layer, and having heavily-doped zones of the semiconductor components which are formed in or extend into the drift zone and are electrically contacted. At least the zones (5, 6) of the semiconductor components, which can have a high potential difference with respect to the substrate during operational functioning mode of the semiconductor components, extend up to the dielectric layer (3).