Patents by Inventor Rachael L. Myers-Ward

Rachael L. Myers-Ward has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10343900
    Abstract: Material structures and methods for etching hexagonal, single-crystal silicon carbide (SiC) materials are provided, which include selection of on-axis or near on-axis hexagonal single-crystal SiC material as the material to be etched. The methods include etching of SiC bulk substrate material, etching of SiC material layers bonded to a silicon oxide layer, etching of suspended SiC material layers, and etching of a SiC material layer anodically bonded to a glass layer. Plasma-etched hexagonal single-crystal SiC materials of the invention may be used to form structures that include, but are not limited to, microelectromechanical beams, microelectromechanical membranes, microelectromechanical cantilevers, microelectromechanical bridges, and microelectromechanical field effect transistor devices.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: July 9, 2019
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Eugene A. Imhoff, Francis J. Kub, Karl D. Hobart, Rachael L. Myers-Ward
  • Publication number: 20190161887
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 30, 2019
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia Wheeler, Charles R. Eddy, JR., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Patent number: 10266963
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: April 23, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Publication number: 20190107524
    Abstract: A sensitive and selective, in-line method to measure and validate the sulfur content at ppb levels in both the liquid and gas phase of fuel. The method includes etching graphene, for example to form a mesa structure comprising horizontal or vertical lines or an array of multidentate star features; functionalizing the etched graphene and attaching metal oxide nanoparticles to the functionalized graphene to form a device; exposing the device to a fuel in the gas or liquid phase; detecting a change in conductivity when sulfur is present in the fuel; and recovering the device for future use. Also disclosed is the related in-line graphene-based ppb level sulfur detector for fuels.
    Type: Application
    Filed: June 20, 2018
    Publication date: April 11, 2019
    Inventors: Evgeniya H. Lock, F. Keith Perkins, Anthony K. Boyd, Rachael L. Myers-Ward, David Kurt Gaskill, Anindya Nath
  • Patent number: 10256094
    Abstract: A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: April 9, 2019
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • Patent number: 10256090
    Abstract: A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: April 9, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • Publication number: 20190033247
    Abstract: An electrochemical cell includes a working electrode in contact with an aqueous electrolyte solution, a counter electrode in contact with the aqueous electrolyte solution, and a reference electrode in contact with the aqueous electrolyte solution. The working electrode comprises a plasma modified epitaxial synthesized graphene surface fabricated on SiC.
    Type: Application
    Filed: July 30, 2018
    Publication date: January 31, 2019
    Inventors: Scott A. Trammell, Rachael L. Myers-Ward, Sandra C. Hangarter, Daniel Zabetakis, David A. Stenger, David Kurt Gaskill, Scott G. Walton
  • Publication number: 20180244513
    Abstract: A structure and method of fabricating suspended beam silicon carbide MEMS structure with low capacitance and good thermal expansion match. A suspended material structure is attached to an anchor material structure that is direct wafer bonded to a substrate. The anchor material structure and the suspended material structure are formed from either a hexagonal single-crystal SiC material, and the anchor material structure is bonded to the substrate while the suspended material structure does not have to be attached to the substrate. The substrate may be a semi-insulating or insulating SiC substrate. The substrate may have an etched recess region on the substrate first surface to facilitate the formation of the movable suspended material structures. The substrate may have patterned electrical electrodes on the substrate first surface, within recesses etched into the substrate.
    Type: Application
    Filed: February 28, 2018
    Publication date: August 30, 2018
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Karl D. Hobart, Eugene A. Imhoff, Rachael L. Myers-Ward
  • Publication number: 20180215623
    Abstract: A method for graphene functionalization that preserves electronic properties and enables nanoparticles deposition comprising providing graphene, functionalizing the graphene via non-covalent or covalent functionalization, rinsing the graphene, drying the graphene, and forming functionalized graphene wherein the functionalized graphene preserves electronic properties and enables nanoparticles deposition. A functionalized graphene wherein the graphene functionalization preserves electronic properties and enables nanoparticles deposition.
    Type: Application
    Filed: January 29, 2018
    Publication date: August 2, 2018
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Evgeniya H. Lock, Michael S. Osofsky, Raymond C Y Auyeung, Rachael L. Myers-Ward, David Kurt Gaskill, Joseph Prestigiacomo
  • Publication number: 20180086625
    Abstract: Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.
    Type: Application
    Filed: September 7, 2017
    Publication date: March 29, 2018
    Applicants: The Government of the United States of America, as Represented by the Secretary of the Navy, The Charles Stark Draper Laboratory, Inc.
    Inventors: Francis J. KUB, Karl D. HOBART, Eugene A. IMHOFF, Rachael L. MYERS-WARD, Eugene COOK, Jonathan BERNSTEIN, Marc WEINBERG
  • Publication number: 20180065844
    Abstract: Material structures and methods for etching hexagonal, single-crystal silicon carbide (SiC) materials are provided, which include selection of on-axis or near on-axis hexagonal single-crystal SiC material as the material to be etched. The methods include etching of SiC bulk substrate material, etching of SiC material layers bonded to a silicon oxide layer, etching of suspended SiC material layers, and etching of a SiC material layer anodically bonded to a glass layer. Plasma-etched hexagonal single-crystal SiC materials of the invention may be used to form structures that include, but are not limited to, microelectromechanical beams, microelectromechanical membranes, microelectromechanical cantilevers, microelectromechanical bridges, and microelectromechanical field effect transistor devices.
    Type: Application
    Filed: September 7, 2017
    Publication date: March 8, 2018
    Applicant: The Government of the United States of America, as Represented by the Secretary of the Navy
    Inventors: Eugene A. IMHOFF, Francis J. KUB, Karl D. HOBART, Rachael L. MYERS-WARD
  • Patent number: 9464366
    Abstract: A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cm2 at the surface of the epitaxial layer. A method of growing an epitaxial SiC layer on an off-axis SiC substrate by: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxially grow SiC on the substrate in the growth chamber. The substrate has an off-axis angle of no more than 6°. The growth conditions include: a growth temperature of 1530-1650° C.; a pressure of 50-125 mbar; a C/H gas flow ratio of 9.38×10?5-1.5×10?3; a C/Si ratio of 0.5-3; a carbon source gas flow rate during ramp to growth temperature from 0 to 15 sccm; and an electron or hole concentration of 1013-1019/cm3.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: October 11, 2016
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L Myers-Ward, David Kurt Gaskill, Brenda L VanMil, Robert E Stahlbush, Charles R. Eddy, Jr.
  • Publication number: 20140255705
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Application
    Filed: January 30, 2014
    Publication date: September 11, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, JR., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Publication number: 20140193965
    Abstract: A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.
    Type: Application
    Filed: March 11, 2014
    Publication date: July 10, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, JR., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • Publication number: 20140190399
    Abstract: A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.
    Type: Application
    Filed: March 11, 2014
    Publication date: July 10, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, JR., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • Patent number: 8652255
    Abstract: A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method.
    Type: Grant
    Filed: October 9, 2008
    Date of Patent: February 18, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Robert E Stahlbush, Brenda L VanMil, Kok-Keong Lew, Rachael L Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr.
  • Patent number: 8603243
    Abstract: A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber.
    Type: Grant
    Filed: July 31, 2008
    Date of Patent: December 10, 2013
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Brenda L VanMil, Kok-Keong Lew, Rachael L Myers-Ward, Charles R. Eddy, Jr., David Kurt Gaskill
  • Publication number: 20110045281
    Abstract: A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cm2 at the surface of the epitaxial layer. A method of growing an epitaxial SiC layer on an off-axis SiC substrate by: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxially grow SiC on the substrate in the growth chamber. The substrate has an off-axis angle of no more than 6°. The growth conditions include: a growth temperature of 1530-1650° C.; a pressure of 50-125 mbar; a C/H gas flow ratio of 9.38×10?5-1.5×10?3; a C/Si ratio of 0.5-3; a carbon source gas flow rate during ramp to growth temperature from 0 to 15 sccm; and an electron or hole concentration of 1013-1019/cm3.
    Type: Application
    Filed: August 20, 2010
    Publication date: February 24, 2011
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Brenda L. VanMil, Robert E. Stahlbush, Charles R. Eddy, JR.
  • Publication number: 20100024719
    Abstract: A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber.
    Type: Application
    Filed: July 31, 2008
    Publication date: February 4, 2010
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Brenda L. VanMil, Kok-Keong Lew, Rachael L. Myers-Ward, Charles R. Eddy, JR., David Kurt Gaskill
  • Publication number: 20090114148
    Abstract: A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method.
    Type: Application
    Filed: October 9, 2008
    Publication date: May 7, 2009
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Robert E. Stahlbush, Brenda L. VanMil, Kok-Keong Lew, Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, JR.