Abstract: The present disclosure relates to methods of fabricating a porous structure, such as a porous silicon carbide structure. The methods can include a step of providing a structure to be rendered porous, and a step of providing an etching solution. The methods can also include a step of electrochemically etching the structure to produce pores through at least a region of the structure, resulting in the formation of a porous structure. The morphology of the porous structure can be controlled by one or more parameters of the electrochemical etching process, such as the strength of the etching solution and/or the applied voltage.

Abstract: The present disclosure relates to methods of fabricating a porous structure, such as a porous silicon carbide structure. The methods can include a step of providing a structure to be rendered porous, and a step of providing an etching solution. The methods can also include a step of electrochemically etching the structure to produce pores through at least a region of the structure, resulting in the formation of a porous structure. The morphology of the porous structure can be controlled by one or more parameters of the electrochemical etching process, such as the strength of the etching solution and/or the applied voltage.

Abstract: The present disclosure relates to methods of fabricating a porous structure, such as a porous silicon carbide structure. The methods can include a step of providing a structure to be rendered porous, and a step of providing an etching solution. The methods can also include a step of electrochemically etching the structure to produce pores through at least a region of the structure, resulting in the formation of a porous structure. The morphology of the porous structure can be controlled by one or more parameters of the electrochemical etching process, such as the strength of the etching solution and/or the applied voltage.

Abstract: The present disclosure relates to methods of fabricating a porous structure, such as a porous silicon carbide structure. The methods can include a step of providing a structure to be rendered porous, and a step of providing an etching solution. The methods can also include a step of electrochemically etching the structure to produce pores through at least a region of the structure, resulting in the formation of a porous structure. The morphology of the porous structure can be controlled by one or more parameters of the electrochemical etching process, such as the strength of the etching solution and/or the applied voltage.

Abstract: The present disclosure relates to methods of making a transition metal dichalcogenide. The methods can include a step of depositing a transition metal onto a substrate to form an epitaxial transition metal layer. The methods can also include a step of depositing a chalcogen onto the epitaxial transition metal layer, and a step of reacting the chalcogen with the epitaxial transition metal layer to form a transition metal dichalcogenide. In some instances, the chalcogen is reacted with the epitaxial transition metal layer at a temperature of between about 300° C. and 600° C., between about 300° C. and 550° C., between about 300° C. and 500° C., between about 300° C. and 450° C., or between about 300° C. and 400° C.

Abstract: A detection pixel includes a material that is chosen so that its (averaged) atomic number density leads to the Compton process being the dominant scattering mechanism in response to incident photons, leading to production of Compton electrons with sufficient number and kinetic energy to produce an electric or magnetic response in the material. The incident photon and Compton electrons each have a characteristic travel distance in the material, and the detection pixel has at least one dimension that is selected according to a range defined by these characteristic travel distances. The detection pixels may be arranged in an array for imaging.

Abstract: A detection pixel includes a material that is chosen so that its (averaged) atomic number density leads to the Compton process being the dominant scattering mechanism in response to incident photons, leading to production of Compton electrons with sufficient number and kinetic energy to produce an electric or magnetic response in the material. The incident photon and Compton electrons each have a characteristic travel distance in the material, and the detection pixel has at least one dimension that is selected according to a range defined by these characteristic travel distances. The detection pixels may be arranged in an array for imaging.

Abstract: The present disclosure relates to methods of making a transition metal dichalcogenide. The methods can include a step of depositing a transition metal onto a substrate to form an epitaxial transition metal layer. The methods can also include a step of depositing a chalcogen onto the epitaxial transition metal layer, and a step of reacting the chalcogen with the epitaxial transition metal layer to form a transition metal dichalcogenide. In some instances, the chalcogen is reacted with the epitaxial transition metal layer at a temperature of between about 300° C. and 600° C., between about 300° C. and 550° C., between about 300° C. and 500° C., between about 300° C. and 450° C., or between about 300° C. and 400° C.

Abstract: A probe module includes a mount; a cantilever disposed on the mount; an electrode disposed on the mount and opposing the cantilever, and a primary fastener disposed on the mount to mechanically separate the cantilever and the electrode at a primary distance. In the probe module, the cantilever is detachably disposed on the mount, the electrode is detachably disposed on the mount, or a combination thereof.

Abstract: A three-dimensional imaging and manipulation tool is provided. Techniques for creating a three-dimensional imaging and manipulation tool include combining high-resolution capability of a probe with three-dimensional imaging capability of a heater sensor. Also, techniques for positioning a nano-manipulation device relative to a surface are provided. The techniques include using a heater sensor for non-contact imaging, linking the heater sensor to the nano-manipulation device, and positioning the nano-manipulation relative device to a surface.

Abstract: A probe module includes a mount; a cantilever disposed on the mount; an electrode disposed on the mount and opposing the cantilever, and a primary fastener disposed on the mount to mechanically separate the cantilever and the electrode at a primary distance. In the probe module, the cantilever is detachably disposed on the mount, the electrode is detachably disposed on the mount, or a combination thereof.

Abstract: A variable temperature assembly for scanning probe microscopy (SPM) is described which minimizes or eliminates motion of the sample caused by the thermal expansion or contraction of the sample holder assembly and platform/scanning stage on which the assembly is mounted, and minimizes heating or cooling of the platform/stage. In heater form, the variable temperature assembly includes a thin boron nitride puck with one or more high-resistivity wires embedded along an underside of the puck. The puck is suspended from its polished top surface by posts that are secured to the microscope stage. All thermal expansion of the puck occurs in the downward direction, away from the SPM probe-sample interface, thus eliminating relative motion between the probe tip and sample surface. The top surface of the puck remains stationary as a result of the unique geometry of the posts and the puck-post attachment configuration described herein.

Abstract: A system, device and method for electrically addressing an element include providing a thermoelectric layer in proximity with an area to be addressed and positioning a probe in proximity of the thermoelectric layer. Electrical activity is induced in the thermoelectric layer by applying heat from the probe. A response is caused in the area to be addressed.

Abstract: A three-dimensional imaging and manipulation tool is provided. Techniques for creating a three-dimensional imaging and manipulation tool include combining high-resolution capability of a probe with three-dimensional imaging capability of a heater sensor. Also, techniques for positioning a nano-manipulation device relative to a surface are provided. The techniques include using a heater sensor for non-contact imaging, linking the heater sensor to the nano-manipulation device, and positioning the nano-manipulation relative device to a surface.

Abstract: A system, device and method for electrically addressing an element include providing a thermoelectric layer in proximity with an area to be addressed and positioning a probe in proximity of the thermoelectric layer. Electrical activity is induced in the thermoelectric layer by applying heat from the probe. A response is caused in the area to be addressed.

Abstract: Device having features formed utilizing probe-based lithography, including: depositing a preceramic polymer on a substrate; writing nanoscale features in the polymer by locally transforming the preceramic polymer via a chemical reaction causing it to undergo a permanent phase change into hardened, ceramic material, the chemical reaction activated with a prescribed activation energy supplied by heat and/or pressure applied by a probe tip; depositing new layers and continuing according to a desired three-dimensional pattern; by cross-linking unactivated preceramic polymer to act as a support medium that isolates a formed ceramic structure mechanically and/or electrically; and where the ceramic pattern is made electrically conductive by (a) incorporating dopant elements into or onto the preceramic polymer, or (b) performing the write step in a chemically-active environment that supplies dopant atoms during the chemical reaction.

Abstract: A method of repairing worn or blunt probe tips, attaching a desired tip material, or defining the registry of probe tips relative to planar surface, including: pressing a probe tip or an array of probe tips into a substrate pre-patterned with an array of tip-shaped molds, the molds containing a preceramic material that can bond to the worn probe tips by thermal activation, the substrate having a protective layer that prevents the preceramic material and/or thermally-activated ceramic material from bonding to the substrate; pressing the worn probe tips into the molds while heating the worn probe tips causing the preceramic material to bond to the worn probe tips and form a solid ceramic material; forming an array comprising a plurality of reconstructed probe tips that are sharper or consisting of a different material than the original worn or base probe tips; and reading and/or writing, with the array comprising the plurality of reconstructed probe tips, data that was unreadable and/or unwritable with the orig

Abstract: Storing data by forming permanent indents in a preceramic polymer, on a substrate, via a chemical reaction transforming the polymer through permanent phase change into hardened, ceramic material, where the chemical reaction activation energy is supplied by heat and pressure applied by a nanoscale probe tip; reading data with the tip by obtaining a topographical signal during readout of the bits; reading data with the tip, where the substrate and ceramic material are conducting, while recording varying electrical resistance measured through the tip-sample contact as the tip slides along the surface; where a separate surface layer formed over the ceramic material including a polymeric thin film with cross-linking protects the tip during writing and readout; and where the substrate is a rigid wall material that can aid indentation by preventing the precursor polymer from accommodating stress applied by the tip with plastic deformation.

Abstract: Probe-based lithography, including: depositing a preceramic polymer on a substrate; writing nanoscale features in the polymer by locally transforming the preceramic polymer via a chemical reaction causing it to undergo a permanent phase change into hardened, ceramic material, the chemical reaction activated with a prescribed activation energy supplied by heat and/or pressure applied by a probe tip; then depositing new layers and continuing according to a desired three-dimensional pattern; either by (a) removing unactivated preceramic polymer utilizing a removal solvent, or (b) cross-linking unactivated preceramic polymer to act as a support medium that isolates a formed ceramic structure mechanically and/or electrically; and where the ceramic pattern is made electrically conductive by (a) incorporating dopant elements into or onto the preceramic polymer, or (b) performing the write step in a chemically-active environment that supplies dopant atoms during the chemical reaction.