Patents by Inventor Rachel S. Goldman

Rachel S. Goldman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same
    Patent number: 7056815
    Abstract: A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: June 6, 2006
    Assignee: The Regents of the University of Michigan
    Inventors: Xiaojun Weng, Rachel S. Goldman