Abstract: An apparatus comprising: a cascode arrangement comprising two or more transistors, the cascode arrangement coupled between a supply voltage terminal for receiving a supply voltage from a battery and a ground terminal, and a bias voltage generator configured to provide a bias voltage to at least one of the two or more transistors of the cascode arrangement to bias the cascode arrangement, the bias voltage generator further configured to increase the bias voltage with increasing supply voltage at a first rate over a first supply voltage range and increase the bias voltage with increasing supply voltage at a second rate, greater than the first rate, over a second supply voltage range, wherein the second supply voltage range comprises a range of voltages greater than the first supply voltage range.

Abstract: In one embodiment, an RFID apparatus is provided, which includes an input circuit that has an input impedance used for receiving RF signals. An RF-signal converter provides an apparatus-operating power signal in response to receiving the RF signals. An impedance circuit provides and selects impedance values in response to at least one select signal provided by a state-machine logic circuit. The state-machine logic circuit provides the select signal(s) in response to the apparatus-operating power signal for selecting the impedance values and therein permit the input impedance to be changed for tuning the RFID apparatus.

Abstract: A non-contact communication device is disclosed comprising: an antenna having an input impedance and being for receiving an AC signal having a voltage and a current, a main unit comprising a power-extraction unit and a communication unit and having a main unit impedance, a tuning circuit, and a matching network for matching the input impedance to the main unit impedance, characterized in that the tuning circuit comprises a phase detector for detecting a phase difference between the voltage and the current and is configured to adjust the impedance of the matching network in dependence on the phase difference. Also disclosed is a method for tuning a non-contact communication device.

Abstract: It is described a high efficiency rectification stage using dynamic threshold MOSFET. The idea is to use the input signal to reduce the threshold voltage when the transistor has to be on, and to increase the threshold when the transistor has to be off. This allows reducing both the resistive losses and the leakage current. A matching network allows the generation of a second higher voltage signal to drive the control gates and the bulk, i.e. the wells, of the transistors. Further, a self-tuned front-end is provided to extend the bandwidth of the high-Q charge pump.

Abstract: In one embodiment, an RFID apparatus is provided, which includes an input circuit that has an input impedance used for receiving RF signals. An RF-signal converter provides an apparatus-operating power signal in response to receiving the RF signals. An impedance circuit provides and selects impedance values in response to at least one select signal provided by a state-machine logic circuit. The state-machine logic circuit provides the select signal(s) in response to the apparatus-operating power signal for selecting the impedance values and therein permit the input impedance to be changed for tuning the RFID apparatus.

Abstract: An electronic device comprising a passive harmonic-rejection mixer. The passive harmonic rejection mixer has an input connected to several sub-mixer stages, and the sub-mixer stages are connected to a summing module for generating the output. Each sub-mixing stage comprises a gating module and a respective amplifier, the gating module adapted to selectively pass the input signal or the input signal with inverted polarity under the control of control signals.

Abstract: It is described a high efficiency rectification stage using dynamic threshold MOSFET. The idea is to use the input signal to reduce the threshold voltage when the transistor has to be on, and to increase the threshold when the transistor has to be off. This allows reducing both the resistive losses and the leakage current. A matching network allows the generation of a second higher voltage signal to drive the control gates and the bulk, i.e. the wells, of the transistors. Further, a self-tuned front-end is provided to extend the bandwidth of the high-Q charge pump.

Abstract: A non-contact communication device is disclosed comprising: an antenna having an input impedance and being for receiving an AC signal having a voltage and a current, a main unit comprising a power-extraction unit and a communication unit and having a main unit impedance, a tuning circuit, and a matching network for matching the input impedance to the main unit impedance, characterised in that the tuning circuit comprises a phase detector for detecting a phase difference between the voltage and the current and is configured to adjust the impedance of the matching network in dependence on the phase difference. Also disclosed is a method for tuning a non-contact communication device.

Abstract: A charge pump stage of an RFID transponder includes an RF node, a capacitor bank, a plurality of current-biased rectifier stages, a DC bus, a programmable current source and a control circuit. The RF node provides an RF signal. The capacitor bank has a selectable capacitance and is electrically coupled to the RF node. The plurality of current-biased rectifier stages receives the RF signal from the RF node. The plurality of current-biased rectifier stages provides a DC output. The DC bus receives the DC output from the plurality of rectifier stages and provides a supply voltage. The programmable current source provides a plurality of current bias signals for each of the plurality of current-biased rectifier stages. The control circuit is in electrical communication with the capacitor bank and the programmable current source. The control circuit selects the selectable capacitance of the capacitor bank and programs the current source.

Abstract: An electronic device comprising a passive harmonic-rejection mixer. The passive harmonic rejection mixer has an input connected to several sub-mixer stages, and the sub-mixer stages are connected to a summing module for generating the output. Each sub-mixing stage comprises a gating module and a respective amplifier, the gating module adapted to selectively pass the input signal or the input signal with inverted polarity under the control of control signals.

Abstract: Consistent with an example embodiment, there is an electronic circuit for amplification of bipolar symmetric current signals. The electronic circuit has a pair of complimentary current mirrors. Depending on the polarity of the bipolar current signal one or the current mirrors is active while the other current mirror is in an off state. This way adding a biasing current to the input signal is avoided which substantially reduces noise.

Abstract: The present invention relates to an electronic circuit for amplification of bipolar symmetric current signals. The electronic circuit has a pair of complimentary current mirrors. Depending on the polarity of the bipolar current signal one or the current mirrors is active while the other current mirror is in an off state. This way adding a biasing current to the input signal is avoided which substantially reduces noise.

Abstract: A current mirror circuit is described which includes a current input terminal (14A), a current output terminal (14B) and a common terminal (14C). A first controllable semiconductor element (T1) is arranged between the current input terminal (14A) and the common terminal (14C). A second controllable semiconductor element (T2) is arranged between the current output terminal (14B) and the common terminal (14C). The controllable semiconductor elements (T1, T2) have interconnected control electrodes (T1A, T2A) which are also coupled to a bias voltage source (VBIAS), for biasing said control electrodes at a reference voltage. The circuit further includes a transconductance stage (12) with an input (12A) coupled to the current input terminal (14A) and an output (12B) coupled to the common terminal (14C). The control electrodes (T1A, T2A) are coupled to the common terminal (14C) via a third controllable semiconductor element (T3).

Abstract: A current mirror circuit is described which includes a current input terminal (14A), a current output terminal (14B) and a common terminal (14C). A first controllable semiconductor element (T1) is arranged between the current input terminal (14A) and the common terminal (14C). A second controllable semiconductor element (T2) is arranged between the current output terminal (14B) and the common terminal (14C). The controllable semiconductor elements (T1, T2) havie interconnected control electrodes (T1A, T2A) which are also coupled to a bias voltage source (VBIAS), for biasing said control electrodes at a reference voltage. The circuit further includes a transconductance stage (12) with an input (12A) coupled to the current input terminal (14A) and an output (12B) coupled to the common terminal (14C). The control electrodes (T1A, T2A) are coupled to the common terminal (14C) via a third controllable semiconductor element (T3).