Abstract: The present disclosure provides methods for manufacturing Doherty power amplifiers. The methods include: providing at least one main amplifier operated at a fundamental frequency; providing at least one peaking amplifier connected to the main amplifier in parallel and sharing a common load or a load; and connecting a first hybrid integrated matching circuit between output terminals of the at least one main amplifier and the at least one peaking amplifier. Connecting the first hybrid integrated matching circuit includes connecting a first circuit between the output terminals of the at least one main amplifier and the at least one peaking amplifier. The first circuit contributes as a part of an impedance inverting network of the first hybrid integrated matching circuit of the Doherty power amplifier.

Abstract: A radio frequency integrated circuit comprising: at least one transistor; a matching circuit coupled to said transistor; and at least one bump is used to form a passive element in said matching circuit, and said bump is used for radio frequency matching, the bumps can be used as passive components for amplifier harmonic impedance matching or the bumps can be the amplifier's passive components of the harmonic impedance matching, both of them can enhance the power, bandwidth and efficiency of amplifiers and integrated circuits.

Abstract: The present disclosure provides a RF power amplifier and a method for manufacturing a Doherty power amplifier. The RF power amplifier includes at least one transistor, a harmonic termination circuit, and an impedance inverter. The harmonic termination circuit has one terminal directly connected to the drain electrode of the transistor and contributes as a part of a harmonic matching network for the transistor at the second harmonic and/or the third harmonic of the fundamental frequency. The impedance inverter is configured to perform impedance inversion of a static load or a modulated load at the fundamental frequency without affected by the harmonic termination circuit.

Abstract: A wideband impedance matching network comprises a fundamental output MN including a first portion and a second portion and a harmonic compensation MN including a harmonic MN portion and a harmonic MN backside-via inductor formed on an outer surface of a harmonic MN backside via hole penetrating through a semiconductor substrate. The first portion, the second portion and the harmonic MN portion are formed on the semiconductor substrate. A second terminal of the first portion and a first terminal of the second portion are connected to an RF output terminal. A first terminal of the harmonic MN portion and a first terminal of the first portion are connected to an RF input terminal. A second terminal of the harmonic MN portion is connected to a first terminal of the harmonic MN backside-via inductor. A second terminal of the harmonic MN backside-via inductor is grounded.