Patents by Inventor Radhika C. Mani

Radhika C. Mani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for in-situ chamber clean utilized in an etching processing chamber
    Patent number: 9533332
    Abstract: Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: January 3, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Noel Sun, Meihua Shen, Nicolas Gani, Chung Nang Liu, Radhika C. Mani
  • Polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch
    Patent number: 9305797
    Abstract: Methods of polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch are described. In an example, a method of forming a three-dimensional gate structure includes performing a main plasma etch on a masked polysilicon layer formed over a semiconductor fin. The method also includes, subsequently, performing a plasma over etch on the masked polysilicon layer based on a plasma generated from gaseous composition including hydrogen gas (H2).
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: April 5, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Radhika C. Mani, Nicolas Gani
  • POLYSILICON OVER-ETCH USING HYDROGEN DILUTED PLASMA FOR THREE-DIMENSIONAL GATE ETCH
    Publication number: 20140199849
    Abstract: Methods of polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch are described. In an example, a method of forming a three-dimensional gate structure includes performing a main plasma etch on a masked polysilicon layer formed over a semiconductor fin. The method also includes, subsequently, performing a plasma over etch on the masked polysilicon layer based on a plasma generated from gaseous composition including hydrogen gas (H2).
    Type: Application
    Filed: January 15, 2014
    Publication date: July 17, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Radhika C. Mani, Nicolas Gani
  • METHODS FOR IN-SITU CHAMBER CLEAN UTILIZED IN AN ETCHING PROCESSING CHAMBER
    Publication number: 20130087174
    Abstract: Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate.
    Type: Application
    Filed: September 13, 2012
    Publication date: April 11, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Noel Sun, Meihua Shen, Nicolas Gani, Chung Nang Liu, Radhika C. Mani