Patents by Inventor Radko Gerard Bankras

Radko Gerard Bankras has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposition of TiN films in a batch reactor
    Patent number: 7966969
    Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: June 28, 2011
    Assignee: ASM International N.V.
    Inventors: Albert Hasper, Gert-Jan Snijders, Lieve Vandezande, Marinus J. De Blank, Radko Gerard Bankras
  • Chemical vapor deposition of TiN films in a batch reactor
    Patent number: 7732350
    Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: June 8, 2010
    Assignee: ASM International N.V.
    Inventors: Albert Hasper, Gert-Jan Snijders, Lieve Vandezande, Marinus J. De Blank, Radko Gerard Bankras