Abstract: A semiconductor device includes a guard structure located laterally between a first active area of a semiconductor substrate and a second active area of the semiconductor substrate. The guard structure includes a first doping region located at a front side surface of the semiconductor substrate, and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. The common doping region extends from a backside surface of the semiconductor substrate to at least a part of the front side surface of the semiconductor substrate in contact with the wiring structure of the guard structure. Corresponding methods for forming the semiconductor device are also described.

Abstract: A semiconductor device includes a guard structure located laterally between a first active area of a semiconductor substrate and a second active area of the semiconductor substrate. The guard structure includes a first doping region located at a front side surface of the semiconductor substrate, and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. The common doping region extends from a backside surface of the semiconductor substrate to at least a part of the front side surface of the semiconductor substrate in contact with the wiring structure of the guard structure. Corresponding methods for forming the semiconductor device are also described.

Abstract: A semiconductor device includes a guard structure located laterally between first and second active areas of a semiconductor substrate. The guard structure includes a first doping region at a front side surface of the substrate and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. The common doping region extends from a backside surface of the substrate to at least a part of the front side surface in contact with the wiring structure. An edge termination doping region laterally surrounds the first and second active areas. The edge termination doping region and the first doping region have a first conductivity type, and the common doping region has a second conductivity type. A resistive connection between the edge termination doping region and the first doping region is present at least during reverse operating conditions of the semiconductor device.

Abstract: A semiconductor device includes a guard structure located laterally between first and second active areas of a semiconductor substrate. The guard structure includes a first doping region at a front side surface of the substrate and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. The common doping region extends from a backside surface of the substrate to at least a part of the front side surface in contact with the wiring structure. An edge termination doping region laterally surrounds the first and second active areas. The edge termination doping region and the first doping region have a first conductivity type, and the common doping region has a second conductivity type. A resistive connection between the edge termination doping region and the first doping region is present at least during reverse operating conditions of the semiconductor device.