Patents by Inventor Rae Sung Kim
Rae Sung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240131532Abstract: According to at least one example embodiment, a substrate treating apparatus includes a substrate support structure including a spin head, the substrate support structure configured to support a substrate, and rotate the substrate, at least one treating liquid recovery container configured to recover at least one substrate treating liquid, and a discharging device including a first nozzle and a second nozzle, the first nozzle configured to discharge a chemical onto the substrate, and the second nozzle configured to discharge deionized water onto the substrate, wherein the first nozzle includes a surface pattern configured to provide roughness on an inner surface of the first nozzle.Type: ApplicationFiled: September 11, 2023Publication date: April 25, 2024Applicants: SEMES CO., LTD., Samsung Electronics Co., Ltd.Inventors: Jong Han KIM, Jin Uk SONG, Rae Taek OH, Ji Ho KIM, Ho Kyung KANG, Kwang Sung SON
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Patent number: 11910698Abstract: Disclosed are an infrared absorption composition, and a photoelectric device, an organic sensor, and an electronic device including the same. The infrared absorption composition includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound. The n-type semiconductor compound includes a compound represented by Chemical Formula 2A, a compound represented by Chemical Formula 2B, a compound represented by Chemical Formula 2C, a fullerene derivative, or a combination thereof. The p-type semiconductor compound and the n-type semiconductor compound provide a bulk heterojunction (BHJ) structure.Type: GrantFiled: May 18, 2021Date of Patent: February 20, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Insun Park, Rae Sung Kim, Dong-Seok Leem
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Patent number: 11849597Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.Type: GrantFiled: September 27, 2021Date of Patent: December 19, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Seok Leem, Rae Sung Kim, Hyesung Choi, Ohkyu Kwon, Changki Kim, Hwang Suk Kim, Bum Woo Park, Jae Jun Lee
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Patent number: 11820859Abstract: An infrared absorbing polymer includes a first structural unit represented by Chemical Formula 1 and a second structural unit including at least one of Chemical Formula 2A to Chemical Formula 2. The infrared absorbing polymer may be included in an infrared absorbing/blocking film, a photoelectric device, a sensor, and an electronic device.Type: GrantFiled: April 28, 2021Date of Patent: November 21, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jae Jun Lee, Ohkyu Kwon, Rae Sung Kim, Hwang Suk Kim, In Sun Park, Dong-Seok Leem
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Patent number: 11777048Abstract: A sensor includes a first electrode, a second electrode facing the first electrode, and a light absorbing layer between the first electrode and the second electrode. The light absorbing layer may have a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption peak in a second infrared wavelength region, the second infrared wavelength region being a longer wavelength region than the first infrared wavelength region. The second absorption spectrum does not at least partially overlap with the first absorption spectrum. The second absorption spectrum may have a lower absorption intensity than the first absorption spectrum. An external quantum efficiency (EQE) spectrum that is amplified in the second infrared wavelength region is exhibited in the sensor.Type: GrantFiled: April 21, 2021Date of Patent: October 3, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Seok Leem, Rae Sung Kim, In Sun Park, Ohkyu Kwon, Changki Kim
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Publication number: 20230125778Abstract: Disclosed are a compound represented by Chemical Formula 1, and a film, an infrared sensor, and an electronic device including the compound. In Chemical Formula 1, Q1, Q2, X1, X2, R1, R2, and A1 are the same as in the specification.Type: ApplicationFiled: September 7, 2022Publication date: April 27, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Ohkyu KWON, Rae Sung KIM, Dong-Seok LEEM, Sangdong KIM, Insun PARK
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Publication number: 20230120456Abstract: An infrared absorption composition includes a p-type semiconductor compound including a first structural unit represented by Chemical Formula 1 and a second structural unit including an electron donating moiety; and an n-type semiconductor compound represented by Chemical Formula 2: wherein, in Chemical Formula 1, Ar1, X, R1a, and R2a are the same as defined in the detailed description. In Chemical Formula 2, A1, A2, D1, D2, and D3 are the same as defined in the detailed description.Type: ApplicationFiled: June 3, 2022Publication date: April 20, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Insun PARK, Changki KIM, Rae Sung KIM, Dong-Seok LEEM, Ohkyu KWON
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Patent number: 11623934Abstract: An infrared absorber includes a compound represented by Chemical Formula In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.Type: GrantFiled: May 28, 2021Date of Patent: April 11, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Ohkyu Kwon, Hwang Suk Kim, Dong-Seok Leem, Rae Sung Kim, Hyesung Choi
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Patent number: 11578082Abstract: A compound is represented by Chemical Formula 1. The compound may be included in, a film, an infrared sensor, a combination sensor, and/or an electronic device. In Chemical Formula 1, X, Y1, Y2, Z1, Z2, Q, R1, and R2 are the same as described in the detailed description.Type: GrantFiled: August 20, 2021Date of Patent: February 14, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Ohkyu Kwon, Rae Sung Kim, Dong-Seok Leem, Changki Kim, Insun Park
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Publication number: 20230015790Abstract: An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.Type: ApplicationFiled: April 8, 2022Publication date: January 19, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-Seok LEEM, Ohkyu KWON, Rae Sung KIM, Insun PARK
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Publication number: 20220140441Abstract: The present disclosure relates to a separator for a lithium secondary battery, and a lithium secondary battery including same, the separator including: a porous substrate, and a heat-resistant layer on at least one surface of the porous substrate, wherein the heat-resistant layer includes a first coating layer including alumina, and a second coating layer including magnesium hydroxide, and the first coating layer and the second coating layer are consecutively disposed in a stacked form on the porous substrate.Type: ApplicationFiled: July 26, 2019Publication date: May 5, 2022Inventors: Minho CHO, Rae Sung KIM, Hana KIM, Myungkook PARK, Seung Rim YANG, Byungmin LEE, Jungsue JANG, Bokyung JUNG
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Publication number: 20220131098Abstract: A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.Type: ApplicationFiled: October 25, 2021Publication date: April 28, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-Seok LEEM, Rae Sung KIM, Ohkyu KWON, Changki KIM, Insun PARK
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Publication number: 20220064182Abstract: A compound is represented by Chemical Formula 1. The compound may be included in, a film, an infrared sensor, a combination sensor, and/or an electronic device. In Chemical Formula 1, X, Y1, Y2, Z1, Z2, Q, R1, and R2 are the same as described in the detailed description.Type: ApplicationFiled: August 20, 2021Publication date: March 3, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Ohkyu KWON, Rae Sung KIM, Dong-Seok LEEM, Changki KIM, Insun PARK
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Publication number: 20220013585Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.Type: ApplicationFiled: September 27, 2021Publication date: January 13, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-Seok LEEM, Rae Sung KIM, Hyesung CHOI, Ohkyu KWON, Changki KIM, Hwang Suk KIM, Bum Woo PARK, Jae Jun LEE
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Publication number: 20210380607Abstract: An infrared absorber includes a compound represented by Chemical Formula In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.Type: ApplicationFiled: May 28, 2021Publication date: December 9, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Ohkyu KWON, Hwang Suk KIM, Dong-Seok LEEM, Rae Sung KIM, Hyesung CHOI
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Publication number: 20210367166Abstract: Disclosed are an infrared absorption composition, and a photoelectric device, an organic sensor, and an electronic device including the same. The infrared absorption composition includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound. The n-type semiconductor compound includes a compound represented by Chemical Formula 2A, a compound represented by Chemical Formula 2B, a compound represented by Chemical Formula 2C, a fullerene derivative, or a combination thereof. The p-type semiconductor compound and the n-type semiconductor compound provide a bulk heterojunction (BHJ) structure.Type: ApplicationFiled: May 18, 2021Publication date: November 25, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Insun PARK, Rae Sung KIM, Dong-Seok LEEM
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Publication number: 20210343891Abstract: A sensor includes a first electrode, a second electrode facing the first electrode, and a light absorbing layer between the first electrode and the second electrode. The light absorbing layer may have a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption peak in a second infrared wavelength region, the second infrared wavelength region being a longer wavelength region than the first infrared wavelength region. The second absorption spectrum does not at least partially overlap with the first absorption spectrum. The second absorption spectrum may have a lower absorption intensity than the first absorption spectrum. An external quantum efficiency (EQE) spectrum that is amplified in the second infrared wavelength region is exhibited in the sensor.Type: ApplicationFiled: April 21, 2021Publication date: November 4, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-Seok LEEM, Rae Sung KIM, In Sun PARK, Ohkyu KWON, Changki KIM
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Publication number: 20210340312Abstract: Disclosed are an infrared absorbing polymer including a first structural unit represented by Chemical Formula 1 and a second structural unit including at least one of Chemical Formula 2A to Chemical Formula 2I, an infrared absorbing/blocking film, a photoelectric device, a sensor, and an electronic device.Type: ApplicationFiled: April 28, 2021Publication date: November 4, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Jae Jun LEE, Ohkyu KWON, Rae Sung KIM, Hwang Suk KIM, In Sun PARK, Dong-Seok LEEM
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Patent number: 11158676Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.Type: GrantFiled: February 12, 2020Date of Patent: October 26, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Seok Leem, Rae Sung Kim, Hyesung Choi, Ohkyu Kwon, Changki Kim, Hwang Suk Kim, Bum Woo Park, Jae Jun Lee
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Publication number: 20210036061Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.Type: ApplicationFiled: February 12, 2020Publication date: February 4, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-Seok LEEM, Rae Sung KIM, Hyesung CHOI, Ohkyu KWON, Changki KIM, Hwang Suk KIM, Bum Woo PARK, Jae Jun LEE