Abstract: An infrared photodiode includes an anode, a cathode, a photoelectric conversion layer between the anode and the cathode and including an infrared absorbing material, and a first auxiliary layer between the anode and the photoelectric conversion layer and a second auxiliary layer between the cathode and the photoelectric conversion layer. The first auxiliary layer and the second auxiliary layer each independently include an electron transport material that is configured to facilitate electron introduction, and/or facility electron transport, and/or inhibit hole movement. A sensor may include the infrared photodiode. An electronic device may include the infrared photodiode.

Abstract: Provided are a compound represented by Chemical Formula 1, a photoelectric device, an image sensor, and an electronic device including the same. In Chemical Formula 1, the definition of each substituent is as described in the specification.

Abstract: A photoelectric device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an electron auxiliary layer between the second electrode and the active layer, wherein the electron auxiliary layer includes any one compound selected from compounds represented by Chemical Formulas 1 to 4 and any combination thereof.

Abstract: A separator for a rechargeable lithium battery and a rechargeable lithium battery, the separator including a porous substrate; and a coating layer on at least one surface of the porous substrate, wherein the coating layer includes a binder and inorganic particles, the binder including a polyurethane and a polyvinyl alcohol, and the polyurethane and the polyvinyl alcohol are included in a weight ratio of about 5:5 to about 9:1.

Abstract: A compound represented by Chemical Formula 1, and near-infrared absorbing/blocking films, photoelectric devices, organic sensors, and electronic devices including the compound are provided: wherein, in Chemical Formula 1, X1 to X4, and R1 to R9 are the same as defined in the detailed description.

Abstract: Disclosed are an infrared absorption composition, and a photoelectric device, an organic sensor, and an electronic device including the same. The infrared absorption composition includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound. The n-type semiconductor compound includes a compound represented by Chemical Formula 2A, a compound represented by Chemical Formula 2B, a compound represented by Chemical Formula 2C, a fullerene derivative, or a combination thereof. The p-type semiconductor compound and the n-type semiconductor compound provide a bulk heterojunction (BHJ) structure.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: An infrared absorbing polymer includes a first structural unit represented by Chemical Formula 1 and a second structural unit including at least one of Chemical Formula 2A to Chemical Formula 2. The infrared absorbing polymer may be included in an infrared absorbing/blocking film, a photoelectric device, a sensor, and an electronic device.

Abstract: A sensor includes a first electrode, a second electrode facing the first electrode, and a light absorbing layer between the first electrode and the second electrode. The light absorbing layer may have a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption peak in a second infrared wavelength region, the second infrared wavelength region being a longer wavelength region than the first infrared wavelength region. The second absorption spectrum does not at least partially overlap with the first absorption spectrum. The second absorption spectrum may have a lower absorption intensity than the first absorption spectrum. An external quantum efficiency (EQE) spectrum that is amplified in the second infrared wavelength region is exhibited in the sensor.

Abstract: Disclosed are a compound represented by Chemical Formula 1, and a film, an infrared sensor, and an electronic device including the compound. In Chemical Formula 1, Q1, Q2, X1, X2, R1, R2, and A1 are the same as in the specification.

Abstract: An infrared absorption composition includes a p-type semiconductor compound including a first structural unit represented by Chemical Formula 1 and a second structural unit including an electron donating moiety; and an n-type semiconductor compound represented by Chemical Formula 2: wherein, in Chemical Formula 1, Ar1, X, R1a, and R2a are the same as defined in the detailed description. In Chemical Formula 2, A1, A2, D1, D2, and D3 are the same as defined in the detailed description.

Abstract: An infrared absorber includes a compound represented by Chemical Formula In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.

Abstract: A compound is represented by Chemical Formula 1. The compound may be included in, a film, an infrared sensor, a combination sensor, and/or an electronic device. In Chemical Formula 1, X, Y1, Y2, Z1, Z2, Q, R1, and R2 are the same as described in the detailed description.

Abstract: An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.

Abstract: The present disclosure relates to a separator for a lithium secondary battery, and a lithium secondary battery including same, the separator including: a porous substrate, and a heat-resistant layer on at least one surface of the porous substrate, wherein the heat-resistant layer includes a first coating layer including alumina, and a second coating layer including magnesium hydroxide, and the first coating layer and the second coating layer are consecutively disposed in a stacked form on the porous substrate.

Abstract: A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.

Abstract: A compound is represented by Chemical Formula 1. The compound may be included in, a film, an infrared sensor, a combination sensor, and/or an electronic device. In Chemical Formula 1, X, Y1, Y2, Z1, Z2, Q, R1, and R2 are the same as described in the detailed description.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: An infrared absorber includes a compound represented by Chemical Formula In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.

Abstract: Disclosed are an infrared absorption composition, and a photoelectric device, an organic sensor, and an electronic device including the same. The infrared absorption composition includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound. The n-type semiconductor compound includes a compound represented by Chemical Formula 2A, a compound represented by Chemical Formula 2B, a compound represented by Chemical Formula 2C, a fullerene derivative, or a combination thereof. The p-type semiconductor compound and the n-type semiconductor compound provide a bulk heterojunction (BHJ) structure.