Patents by Inventor Rafael C. Howell
Rafael C. Howell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12210291Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New pattering process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new pattering process impact data.Type: GrantFiled: May 14, 2021Date of Patent: January 28, 2025Assignee: ASML NETHERLANDS B.V.Inventors: Xingyue Peng, Zhan Shi, Duan-Fu Stephen Hsu, Rafael C. Howell, Gerui Liu
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Publication number: 20240419086Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.Type: ApplicationFiled: August 29, 2024Publication date: December 19, 2024Applicant: ASML NETHERLANDS B.V.Inventors: Xingyue PENG, Duan-Fu Stephen Hsu, Rafael C. Howell, Qinglin Li
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Patent number: 12092963Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.Type: GrantFiled: March 26, 2020Date of Patent: September 17, 2024Assignee: ASML NETHERLANDS B.V.Inventors: Xingyue Peng, Duan-Fu Stephen Hsu, Rafael C. Howell, Qinglin Li
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Patent number: 11977334Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.Type: GrantFiled: December 28, 2022Date of Patent: May 7, 2024Assignee: ASML NETHERLANDS B.V.Inventors: Duan-Fu Stephen Hsu, Christoph Rene Konrad Cebulla Hennerkes, Rafael C. Howell, Zhan Shi, Xiaoyang Jason Li, Frank Staals
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Patent number: 11972194Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.Type: GrantFiled: December 28, 2022Date of Patent: April 30, 2024Assignee: ASML NETHERLANDS B.V.Inventors: Roshni Biswas, Rafael C. Howell, Cuiping Zhang, Ningning Jia, Jingjing Liu, Quan Zhang
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Patent number: 11789371Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.Type: GrantFiled: August 5, 2022Date of Patent: October 17, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Yu Cao, Yen-Wen Lu, Peng Liu, Rafael C. Howell, Roshni Biswas
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Patent number: 11734490Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.Type: GrantFiled: December 29, 2021Date of Patent: August 22, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Quan Zhang, Been-Der Chen, Rafael C. Howell, Jing Su, Yi Zou, Yen-Wen Lu
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Publication number: 20230161264Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.Type: ApplicationFiled: December 28, 2022Publication date: May 25, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Duan-Fu Stephen HSU, Christoph Rene Konrad Cebulla Hennerkes, Rafael C. Howell, Zhan Shi, Xiaoyang Jason Li, Frank Staals
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Patent number: 11614690Abstract: Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.Type: GrantFiled: January 24, 2018Date of Patent: March 28, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Mu Feng, Mir Farrokh Shayegan Salek, Dianwen Zhu, Leiwu Zheng, Rafael C. Howell, Jen-Shiang Wang
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Patent number: 11586114Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.Type: GrantFiled: June 21, 2019Date of Patent: February 21, 2023Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Christoph Rene Konrad Cebulla Hennerkes, Rafael C. Howell, Zhan Shi, Xiaoyang Jason Li, Frank Staals
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Patent number: 11580289Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.Type: GrantFiled: October 29, 2019Date of Patent: February 14, 2023Assignee: ASML Netherlands B.V.Inventors: Roshni Biswas, Rafael C. Howell, Cuiping Zhang, Ningning Jia, Jingjing Liu, Quan Zhang
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Patent number: 11506984Abstract: A method including: determining a first simulated partial image formed, by a lithographic projection apparatus, from a first radiation portion propagating along a first group of one or more directions; determining a second simulated partial image formed, by the lithographic projection apparatus, from a second radiation portion propagating along a second group of one or more directions; and determining an image by incoherently adding the first partial image and the second partial image, wherein the first group of one or more directions and the second group of one or more directions are different.Type: GrantFiled: May 13, 2016Date of Patent: November 22, 2022Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Rafael C. Howell, Jianjun Jia
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Patent number: 11409203Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.Type: GrantFiled: May 21, 2021Date of Patent: August 9, 2022Assignee: ASML Netherlands B.V.Inventors: Yu Cao, Yen-Wen Lu, Peng Liu, Rafael C. Howell, Roshni Biswas
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Publication number: 20220121804Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.Type: ApplicationFiled: December 29, 2021Publication date: April 21, 2022Applicant: ASML NETHERLAND B.V.Inventors: Quan Zhang, Been-Der Chen, Rafael C. Howell, Jing Su, Yi Zou, Yen-Wen Lu
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Patent number: 11232249Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.Type: GrantFiled: February 28, 2019Date of Patent: January 25, 2022Assignee: ASML Netherlands B.V.Inventors: Quan Zhang, Been-Der Chen, Rafael C. Howell, Jing Su, Yi Zou, Yen-Wen Lu
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Patent number: 11054750Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illuminator and projection optics, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.Type: GrantFiled: September 11, 2014Date of Patent: July 6, 2021Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Rafael C. Howell, Feng-Liang Liu
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Patent number: 11016395Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.Type: GrantFiled: December 6, 2017Date of Patent: May 25, 2021Assignee: ASML Netherlands B.V.Inventors: Yu Cao, Yen-Wen Lu, Peng Liu, Rafael C. Howell, Roshni Biswas
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Patent number: 10990003Abstract: A method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, an initial continuous tone image corresponding to the target pattern, a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.Type: GrantFiled: February 15, 2019Date of Patent: April 27, 2021Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Jingjing Liu, Rafael C. Howell, Xingyue Peng
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Patent number: 10558124Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: calculating a discrete pupil profile based on a desired pupil profile; selecting a discrete change to the discrete pupil profile; and applying the selected discrete change to the discrete pupil profile. The methods according to various embodiments disclosed herein may reduce the computational cost of discrete optimization from O(an) to O(n) wherein a is constant and n is the number of knobs that can generate discrete change in the pupil profile.Type: GrantFiled: January 25, 2019Date of Patent: February 11, 2020Assignee: ASML Netherlands B.V.Inventors: Xiaofeng Liu, Rafael C. Howell
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Patent number: 10459346Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.Type: GrantFiled: July 16, 2018Date of Patent: October 29, 2019Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Stephen Hsu, Rafael C. Howell, Xiaofeng Liu