Patents by Inventor Rafael Nadal Guardia

Rafael Nadal Guardia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device for adjusting threshold value shift due to short channel effect
    Patent number: 7030637
    Abstract: A semiconductor device detects and adjusts leakage current dependent on threshold voltage of an integrated semiconductor device. To adjust the threshold voltage variation due to uncertainties in the channel length induced by the fabrication process (short channel effect) in the semiconductor a comparison between small and long channel devices is proposed. According to the comparison result, a bias potential is provided to the semiconductor device to adjust the threshold voltage.
    Type: Grant
    Filed: August 13, 2003
    Date of Patent: April 18, 2006
    Assignee: Infineon Technologies AG
    Inventors: Jorg Berthold, Rafael Nadal Guardia
  • Semiconductor device for detecting and adjusting a threshold value variation
    Patent number: 6965247
    Abstract: The present invention generally relates to a semiconductor device and more specifically to a semiconductor device for detecting and adjusting threshold voltage variations of an integrated semiconductor device implemented in sub-micron technology, i.e. transistors, and a method related thereto. To adjust the threshold voltage variation induced by the fabrication process in the semiconductor a comparison between a device under test and a fixed voltage value is provided. According to the invention, a constant current is injected in the transistor and the gate-to-source potential is fixed by a bias voltage. According to the comparison result, a well potential is provided to the semiconductor device to adjust the threshold voltage.
    Type: Grant
    Filed: November 28, 2003
    Date of Patent: November 15, 2005
    Assignee: Infineon Technologies, AG
    Inventor: Rafael Nadal Guardia
  • Semiconductor device for detecting and adjusting a threshold value variation
    Publication number: 20040135142
    Abstract: The present invention generally relates to a semiconductor device and more specifically to a semiconductor device for detecting and adjusting threshold voltage variations of an integrated semiconductor device implemented in sub-micron technology, i.e. transistors, and a method related thereto. To adjust the threshold voltage variation induced by the fabrication process in the semiconductor a comparison between a device under test and a fixed voltage value is provided. According to the invention, a constant current is injected in the transistor and the gate-to-source potential is fixed by a bias voltage. According to the comparison result, a well potential is provided to the semiconductor device to adjust the threshold voltage.
    Type: Application
    Filed: November 28, 2003
    Publication date: July 15, 2004
    Inventor: Rafael Nadal Guardia
  • Semiconductor device for adjusting threshold value shift due to short channel effect
    Publication number: 20040113649
    Abstract: A semiconductor device detects and adjusts leakage current dependent on threshold voltage of an integrated semiconductor device. To adjust the threshold voltage variation due to uncertainties in the channel length induced by the fabrication process (short channel effect) in the semiconductor a comparison between small and long channel devices is proposed. According to the comparison result, a bias potential is provided to the semiconductor device to adjust the threshold voltage.
    Type: Application
    Filed: August 13, 2003
    Publication date: June 17, 2004
    Inventors: Jorg Berthold, Rafael Nadal Guardia