Abstract: A plasma impedance matching unit for a plasma power supply system includes a first power connector for coupling the matching unit to a RF power source, a second power connector for coupling the matching unit to a plasma load, a data link interface for directly coupling the matching unit to another plasma impedance matching unit via a data link, and a controller configured to control the matching unit to match an impedance from the first power connector to an impedance at the second power connector, to operate as a master for at least one other impedance matching unit and/or at least one RF power source of the plasma power supply system, and to communicate via the data link interface with the at least one other impedance matching unit and/or the at least one RF power source of the plasma power supply system.

Abstract: A plasma impedance matching unit for a plasma power supply system includes a first power connector for coupling the matching unit to a RF power source, a second power connector for coupling the matching unit to a plasma load, a data link interface for directly coupling the matching unit to another plasma impedance matching unit via a data link, and a controller configured to control the matching unit to match an impedance from the first power connector to an impedance at the second power connector, to operate as a master for at least one other impedance matching unit and/or at least one RF power source of the plasma power supply system, and to communicate via the data link interface with the at least one other impedance matching unit and/or the at least one RF power source of the plasma power supply system.

Abstract: A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.

Abstract: According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled.

Abstract: A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film.

Abstract: A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film.

Abstract: The current (Iout) flowing between a plasma chamber and a power supply is limited by limiting the current change di/dt if the current exceeds a predetermined current. A current change limiting device is provided in the current path between the power supply and the plasma chamber and is configured to determine if the current exceeds the predetermined current and limits the current change.

Abstract: According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled.

Abstract: According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled.

Abstract: A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.

Abstract: According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled.

Abstract: A vacuum treatment apparatus (10) for treating at least one substrate (12) and comprising a treatment chamber (14), at least one cathode (16), a power supply (18) associated with the cathode for generating ions of a material present in the gas phase in the chamber and/or ions of a material of which the cathode is formed, a substrate carrier (20) and a bias power supply for applying a negative bias to the substrate carrier and any substrate present thereon, whereby to attract said ions to said at least one substrate, said cathode power supply being adapted to apply relatively high power pulses of relatively short duration to said cathode at intervals resulting in lower average power levels comparable with DC operation, e.g. in the range from ca.

Abstract: The current (Iout) flowing between a plasma chamber and a power supply is limited by limiting the current change di/dt if the current exceeds a predetermined current. A current change limiting device is provided in the current path between the power supply and the plasma chamber and is configured to determine if the current exceeds the predetermined current and limits the current change.

Abstract: A circuit configuration reduces electrical energy stored in a lead inductance formed by a plurality of leads that connect a power supply unit with a load. The circuit configuration includes a switching device in operative connection with at least one of the leads for enabling or interrupting power to the load. The circuit configuration also includes a first electrical nonlinear device arranged in parallel with the switching device; an energy storing device arranged in parallel with the switching device and in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device for charging the energy storing device to a pre-determined voltage level while power to the load is enabled.