Abstract: A method for producing a microoptoelectromechanical component and a corresponding microoptoelectromechanical component. The microoptoelectromechanical component is equipped with a base substrate comprising a cavity which is formed therein and is closed by a covering substrate, an optical waveguide on the covering substrate above the cavity, which optical waveguide comprises a sheathed waveguide core, an electrical contact element in the region of the surrounding covering substrate, wherein a contact pad formed by an electrically conductive polysilicon layer is arranged underneath the electrical contact element, wherein the optical waveguide and the covering substrate located thereunder are divided into a stationary portion and a deflectable portion, which can be docked to the stationary portion by electrically deflecting the corresponding portion of the covering wafer.

Abstract: A method for producing a microoptoelectromechanical component and a corresponding microoptoelectromechanical component. The microoptoelectromechanical component is equipped with a base substrate comprising a cavity which is formed therein and is closed by a covering substrate, an optical waveguide on the covering substrate above the cavity, which optical waveguide comprises a sheathed waveguide core, an electrical contact element in the region of the surrounding covering substrate, wherein a contact pad formed by an electrically conductive polysilicon layer is arranged underneath the electrical contact element, wherein the optical waveguide and the covering substrate located thereunder are divided into a stationary portion and a deflectable portion, which can be docked to the stationary portion by electrically deflecting the corresponding portion of the covering wafer.

Abstract: A method for setting a pressure in a cavity formed with the aid of a substrate and a substrate cap, a microelectromechanical system being situated in the cavity, the substrate including a main extension plane. The method includes the following steps: in a first step a clearance is created in the substrate cap, the clearance connecting the cavity to the surroundings, a first clearance end of the clearance being formed on a first surface of the substrate cap that faces away from the cavity, a second clearance end of the clearance being formed on a cavity-side second surface of the substrate cap, the first clearance end and the second clearance end being situated at a distance from one another at least in a first direction which is parallel to the main extension plane; in a second step, after the first step, the clearance is sealed.

Abstract: A method for setting a pressure in a cavity formed with the aid of a substrate and a substrate cap, a microelectromechanical system being situated in the cavity, the substrate including a main extension plane. The method includes the following steps: in a first step a clearance is created in the substrate cap, the clearance connecting the cavity to the surroundings, a first clearance end of the clearance being formed on a first surface of the substrate cap that faces away from the cavity, a second clearance end of the clearance being formed on a cavity-side second surface of the substrate cap, the first clearance end and the second clearance end being situated at a distance from one another at least in a first direction which is parallel to the main extension plane; in a second step, after the first step, the clearance is sealed.

Abstract: A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate, forming on the semiconductor substrate a layer including a semiconductor compound and a dope additive, and thereafter forming an emitter region and gettering impurities by annealing the semiconductor substrate including the layer.

Abstract: A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate, forming on the semiconductor substrate a layer including a semiconductor compound and a dope additive, and thereafter forming an emitter region and gettering impurities by annealing the semiconductor substrate including the layer.