Patents by Inventor Raffael Schnell
Raffael Schnell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9984953Abstract: A semiconductor assembly includes a stack with a semiconductor module and a cooler, wherein the semiconductor module is provided in contact with the cooler. A clamping assembly is adapted to exert a force on the two sides of the stack. The stack is provided with a through hole between the two sides thereof and a part of the clamping assembly including an electrically conductive part which extends through the through hole of the stack. Thereby, a compact mechanical arrangement is provided while obtaining improved electrical properties, such as lower inductance and more even current distribution.Type: GrantFiled: December 7, 2012Date of Patent: May 29, 2018Assignee: ABB SCHWEIZ AGInventors: Olle Ekwall, Erik Doré, Franc Dugal, Raffael Schnell
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Patent number: 9654085Abstract: A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level.Type: GrantFiled: November 22, 2011Date of Patent: May 16, 2017Assignee: ABB SCHWEIZ AGInventors: Falah Hosini, Madhan Mohan, Siva Nagi Reddy Pamulapati, Arnost Kopta, Munaf Rahimo, Raffael Schnell, Ulrich Schlapbach
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Publication number: 20160329264Abstract: A semiconductor assembly includes a stack with a semiconductor module and a cooler, wherein the semiconductor module is provided in contact with the cooler. A clamping assembly is adapted to exert a force on the two sides of the stack. The stack is provided with a through hole between the two sides thereof and a part of the clamping assembly including an electrically conductive part which extends through the through hole of the stack. Thereby, a compact mechanical arrangement is provided while obtaining improved electrical properties, such as lower inductance and more even current distribution.Type: ApplicationFiled: December 7, 2012Publication date: November 10, 2016Applicant: ABB Technology LtdInventors: Olle EKWALL, Erik DORÉ, Franc DUGAL, Raffael SCHNELL
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Publication number: 20140320178Abstract: A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level.Type: ApplicationFiled: November 22, 2011Publication date: October 30, 2014Applicant: ABB TECHNOLOGY AGInventors: Falah Hosini, Madhan Mohan, Siva Nagi Reddy Pamulapati, Arnost Kopta, Munaf Rahimo, Raffael Schnell, Ulrich Schlapbach
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Patent number: 8749051Abstract: A semiconductor device which provides a small and simple design with efficient cooling. A first electrically conducting cooling element is in contact with first electrodes of semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the first electrodes of the semiconductor elements to an external apparatus. A second electrically conducting cooling element is in contact with second electrodes of the semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the second electrodes of the semiconductor elements to an external apparatus. The semiconductor device includes an interface which is electrically connected to gates of the semiconductor elements for external control of respective states of the semiconductor elements.Type: GrantFiled: February 7, 2012Date of Patent: June 10, 2014Assignee: ABB Research LtdInventors: Slavo Kicin, Nicola Schulz, Munaf Rahimo, Raffael Schnell
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Publication number: 20120199954Abstract: A semiconductor device which provides a small and simple design with efficient cooling. A first electrically conducting cooling element is in contact with first electrodes of semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the first electrodes of the semiconductor elements to an external apparatus. A second electrically conducting cooling element is in contact with second electrodes of the semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the second electrodes of the semiconductor elements to an external apparatus. The semiconductor device includes an interface which is electrically connected to gates of the semiconductor elements for external control of respective states of the semiconductor elements.Type: ApplicationFiled: February 7, 2012Publication date: August 9, 2012Applicant: ABB RESEARCH LTDInventors: Slavo KICIN, Nicola Schulz, Munaf Rahimo, Raffael Schnell
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Patent number: 8212283Abstract: A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of the wafer forms a base layer with a base layer thickness. A first layer of a first conductivity type with at least one first region and a second layer of a second conductivity type with at least one second and third region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The RC-IGBT can be configured such that the following exemplary geometrical rules are fulfilled: each third region area is an area, in which any two first regions have a distance bigger (i.e.Type: GrantFiled: April 29, 2010Date of Patent: July 3, 2012Assignee: ABB Technology AGInventors: Liutauras Storasta, Munaf Rahimo, Christoph Von Arx, Arnost Kopta, Raffael Schnell
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Publication number: 20100276727Abstract: A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of the wafer forms a base layer with a base layer thickness. A first layer of a first conductivity type with at least one first region and a second layer of a second conductivity type with at least one second and third region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The RC-IGBT can be configured such that the following exemplary geometrical rules are fulfilled: each third region area is an area, in which any two first regions have a distance bigger (i.e.Type: ApplicationFiled: April 29, 2010Publication date: November 4, 2010Applicant: ABB Technology AGInventors: Liutauras STORASTA, Munaf Rahimo, Christoph Von Arx, Arnost Kopta, Raffael Schnell
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Patent number: 7671639Abstract: In the case of an electronic circuit, comprising a drive unit, which generates at least one drive signal, two or more power semiconductor switches each having a first and a second main terminal, which power semiconductor switches can be switched synchronously by the drive signal, the first and the second main terminals of the power semiconductor switches in each case being electrically connected in parallel among one another, for each of the power semiconductor switches a first and a second electrically conductive connection for connection to the drive unit, a uniform dynamic current division between the power semiconductor switches is achieved according to the invention by virtue of the fact that a first inductance is provided in each of the first electrically conductive connections, and a second inductance is provided in each of the second electrically conductive connections, the first inductance being coupled to the second inductance for each of the power semiconductor switches.Type: GrantFiled: May 18, 2004Date of Patent: March 2, 2010Assignee: ABB Technology AGInventors: Ulrich Schlapbach, Raffael Schnell
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Publication number: 20060226708Abstract: In the case of an electronic circuit, comprising a drive unit (20), which generates at least one drive signal, two or more power semiconductor switches (T1, T2, T3) each having a first and a second main terminal, which power semiconductor switches can be switched synchronously by the drive signal, the first and the second main terminals of the power semiconductor switches (T1, T2, T3) in each case being electrically connected in parallel among one another, for each of the power semiconductor switches (T1, T2, T3) a first and a second electrically conductive connection for connection to the drive unit (20), a uniform dynamic current division between the power semiconductor switches (T1, T2, T3) is achieved according to the invention by virtue of the fact that a first inductance is provided in each of the first electrically conductive connections, and a second inductance is provided in each of the second electrically conductive connections, the first inductance being coupled to the second inductance for each ofType: ApplicationFiled: May 18, 2004Publication date: October 12, 2006Applicant: ABB Technology AGInventors: Ulrich Schlapbach, Raffael Schnell