Patents by Inventor Rafi Kraus

Rafi Kraus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9111971
    Abstract: A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: August 18, 2015
    Assignee: APPLIED MATERIALS ISRAEL, LTD.
    Inventors: Lavy Shavit, Rafi Kraus, Itzak Yair, Samuel Nackash, Yuri Belenky
  • Publication number: 20140027437
    Abstract: A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.
    Type: Application
    Filed: July 30, 2012
    Publication date: January 30, 2014
    Inventors: Lavy Shavit, Rafi Kraus, Itzak Yair, Samuel Nackash, Yuri Belenky