Patents by Inventor Raghu Vamsi Krishna TALANKI

Raghu Vamsi Krishna TALANKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12293081
    Abstract: The present disclosure relates to field of Dual In-Line Memory Modules that discloses method and system for generating memory maps. The method comprises detecting, by computing system, at least one of DIMM and one or more Dynamic Random Access Memory (DRAM) chips associated with computing system. The one or more accelerators are configured in at least one of DIMM and one or more DRAM chips. Further, the method includes determining accelerator information for each of one or more accelerators via at least one of Serial Presence Detect (SPD) and Multi-Purpose Register (MPR) associated with at least one of DIMM and one or more DRAM chips. Method includes generating unique memory map for each of one or more accelerators based on accelerator information of corresponding one or more accelerators. As a result, performance of computing system may be improved as accelerator capabilities of one or more accelerators are effectively utilized.
    Type: Grant
    Filed: May 2, 2023
    Date of Patent: May 6, 2025
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Raghu Vamsi Krishna Talanki, Archita Khare, Eldho P. Mathew, Jin In So, Jong-Geon Lee, Venkata Ravi Shankar Jonnalagadda, Vishnu Charan Thummala
  • Patent number: 12223188
    Abstract: A memory interface for interfacing with a memory device includes a control circuit configured to determine whether a trigger event has occurred for initializing one or more memory locations in the memory device, and initialize the one or more memory locations in the memory device with pre-defined data upon determining the trigger event has occurred.
    Type: Grant
    Filed: May 19, 2022
    Date of Patent: February 11, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Raghu Vamsi Krishna Talanki, Archita Khare, Rahul Tarikere Ravikumar, Jinin So, Jonggeon Lee
  • Publication number: 20240295963
    Abstract: The present disclosure relates to field of Dual In-Line Memory Modules that discloses method and system for generating memory maps. The method comprises detecting, by computing system, at least one of DIMM and one or more Dynamic Random Access Memory (DRAM) chips associated with computing system. The one or more accelerators are configured in at least one of DIMM and one or more DRAM chips. Further, the method includes determining accelerator information for each of one or more accelerators via at least one of Serial Presence Detect (SPD) and Multi-Purpose Register (MPR) associated with at least one of DIMM and one or more DRAM chips. Method includes generating unique memory map for each of one or more accelerators based on accelerator information of corresponding one or more accelerators. As a result, performance of computing system may be improved as accelerator capabilities of one or more accelerators are effectively utilized.
    Type: Application
    Filed: May 2, 2023
    Publication date: September 5, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Raghu Vamsi Krishna TALANKI, Archita KHARE, Eldho P. MATHEW, Jin In SO, Jong-Geon LEE, Venkata Ravi Shankar JONNALAGADDA, Vishnu Charan THUMMALA
  • Patent number: 11797440
    Abstract: A Near Memory Processing (NMP) dual in-line memory module (DIMM) for managing an address map is provided. The NMP DIMM includes: a static random-access memory (SRAM) provided on a Double Data Rate (DDR) interface; and an address management controller coupled to the SRAM, and configured to control the NMP DIMM to: receive a first indication from a host system to perform interface training for operating an SRAM space; perform the interface training using a first address map based on the first indication; receive a second indication from the host system indicating completion of the interface training for operating the SRAM space; switch from the first address map to a second address map for operating the SRAM space in response based on the second indication; and operate the SRAM space using the second address map.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: October 24, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Raghu Vamsi Krishna Talanki, Eldho Pathiyakkara Thombra Mathew, Vishnu Charan Thummala, Vinod Kumar Srinivasan, Jin In So, Jong-Geon Lee
  • Publication number: 20230214138
    Abstract: A memory interface for interfacing with a memory device includes a control circuit configured to determine whether a trigger event has occurred for initializing one or more memory locations in the memory device, and initialize the one or more memory locations in the memory device with pre-defined data upon determining the trigger event has occurred.
    Type: Application
    Filed: May 19, 2022
    Publication date: July 6, 2023
    Inventors: Raghu Vamsi Krishna TALANKI, Archita KHARE, Rahul Tarikere RAVIKUMAR, Jinin SO, Jonggeon LEE
  • Publication number: 20230004489
    Abstract: A Near Memory Processing (NMP) dual in-line memory module (DIMM) for managing an address map is provided. The NMP DIMM includes: a static random-access memory (SRAM) provided on a Double Data Rate (DDR) interface; and an address management controller coupled to the SRAM, and configured to control the NMP DIMM to: receive a first indication from a host system to perform interface training for operating an SRAM space; perform the interface training using a first address map based on the first indication; receive a second indication from the host system indicating completion of the interface training for operating the SRAM space; switch from the first address map to a second address map for operating the SRAM space in response based on the second indication; and operate the SRAM space using the second address map.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 5, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Raghu Vamsi Krishna TALANKI, Eldho Pathiyakkara Thombra Mathew, Vishnu Charan Thummala, Vinod Kumar Srinivasan, Jin ln So, Jong-Geon Lee
  • Patent number: 11436379
    Abstract: A method for securing one or more cells of a dynamic random-access memory (DRAM) device embedded in a system includes: (1) triggering, by one of a boot loader, an operating system (OS) and an application, a system management interrupt (SMI), (2) invoking, by a basic input/output system (BIOS), a BIOS SMI handler, (3) converting a physical address of secure data to a DRAM address using a reliability, availability and serviceability (RAS) protocol of a BIOS, and (4) performing a write protect operation on the secure data present in the DRAM device by issuing a device-supported security command in a BIOS SMI service routine.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: September 6, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Raghu Vamsi Krishna Talanki, Krishna Mogilipuvvu
  • Publication number: 20200104535
    Abstract: A method for securing one or more cells of a dynamic random-access memory (DRAM) device embedded in a system includes: (1) triggering, by one of a boot loader, an operating system (OS) and an application, a system management interrupt (SMI), (2) invoking, by a basic input/output system (BIOS), a BIOS SMI handler, (3) converting a physical address of secure data to a DRAM address using a reliability, availability and serviceability (RAS) protocol of a BIOS, and (4) performing a write protect operation on the secure data present in the DRAM device by issuing a device-supported security command in a BIOS SMI service routine.
    Type: Application
    Filed: August 26, 2019
    Publication date: April 2, 2020
    Inventors: Raghu Vamsi Krishna TALANKI, Krishna MOGILIPUVVU