Patents by Inventor Raghupathy Giridhar

Raghupathy Giridhar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220262626
    Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
    Type: Application
    Filed: May 5, 2022
    Publication date: August 18, 2022
    Inventors: Luan C. Tran, Raghupathy Giridhar
  • Patent number: 11348788
    Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: May 31, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Luan C. Tran, Raghupathy Giridhar
  • Publication number: 20200090929
    Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
    Type: Application
    Filed: November 22, 2019
    Publication date: March 19, 2020
    Inventors: Luan C. Tran, Raghupathy Giridhar
  • Patent number: 10522348
    Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: December 31, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Luan C. Tran, Raghupathy Giridhar
  • Publication number: 20190148135
    Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
    Type: Application
    Filed: January 16, 2019
    Publication date: May 16, 2019
    Inventors: Luan C. Tran, Raghupathy Giridhar
  • Publication number: 20150170905
    Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
    Type: Application
    Filed: March 2, 2015
    Publication date: June 18, 2015
    Inventors: Luan C. Tran, Raghupathy Giridhar
  • Patent number: 8980756
    Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
    Type: Grant
    Filed: July 30, 2007
    Date of Patent: March 17, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Luan C. Tran, Raghupathy Giridhar
  • Publication number: 20090035584
    Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
    Type: Application
    Filed: July 30, 2007
    Publication date: February 5, 2009
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Luan C. Tran, Raghupathy Giridhar