Abstract: A new design configuration of an RF-transceiver front end is proposed. The Power Amplifier (PA) output stage of the transceiver comprises a cascode circuitry of N-type transistors with open-drain-configuration. The cascode-transistor is acting as a common-gate-transistor, whose gate is controlled to block the transmitting-(TX) path. The Low Noise Amplifier (LNA) input stage uses a common-gate configuration of a p-channel MOS-transistor that is controlled by the voltage at the bulk terminal. Lifting the bulk potential of this PMOS-transistor above its source potential disables the receiving-(RX)-path. This design allows low cost implementation for TDMA-RF-transceivers especially for Bluetooth-Solutions. The number of external components is reduced. No additional TX/RX switch is required. The same port and the same matching elements for the antenna's bandwidth adaptation are used for both the TX-path and the RX-path.

Abstract: 2.1. A new design configuration of an RF-transceiver front end is proposed. 2.2. The Power Amplifier (PA) output stage of the transceiver comprises a cascode circuitry of N-type transistors with open-drain-configuration. The cascode-transistor is acting as a common-gate-transistor, whose gate is controlled to block the transmitting-(TX) path. The Low Noise Amplifier (LNA) input stage uses a common-gate configuration of a p-channel MOS-transistor that is controlled by the voltage at the bulk terminal. Lifting the bulk potential of this PMOS-transistor above its source potential disables the receiving-(RX)-path. 2.3. This design allows low cost implementation for TDMA-RF-transceivers especially for Bluetooth-Solutions. The number of external components is reduced. No additional TX/RX switch is required. The same port and the same matching elements for the antenna's bandwidth adaptation are used for both, the TX-path and the RX-path.