Abstract: The present disclosure is directed to methods for producing a single-walled carbon nanotube in a chemical vapor deposition (CVD) reactor. The methods comprise contacting liquid catalyst droplets and a carbon source in the reactor, and forming a single walled carbon nanotube at the surface of the liquid catalyst droplets.

Abstract: The present disclosure is directed to methods for altering the surface of carbon fibers by growing carbon nanotubes thereon. Coverage of the carbon fibers by carbon nanotubes provides increased surface area and aspect ratio, as well as provides high electrical and thermal conductivity. In some embodiments, the surface of the carbon fibers are further modified via argon-ion bombardment or plasma treatment to provide controllable defects and to allow for easier growth of carbon nanotubes on the surface of the carbon fibers.

Abstract: Method of growing carbon nanotubes which are substantially vertically aligned on a diamond-based substrate via a chemical vapor deposition system utilizing an iron-based catalyst is disclosed.

Abstract: The present disclosure is directed to methods for producing a single-walled carbon nanotube in a chemical vapor deposition (CVD) reactor. The methods comprise contacting liquid catalyst droplets and a carbon source in the reactor, and forming a single walled carbon nanotube at the surface of the liquid catalyst droplets.

Abstract: Apparatus, systems, and methods provide access to the renal pelvis of a kidney to treat renal nerves embedded in tissue surrounding the renal pelvis. Access to the renal pelvis may be via the urinary tract or via minimally invasive incisions through the abdomen and kidney tissue. Treatment is effected by exchanging energy, typically delivering heat or extracting heat through a wall of the renal pelvis, or by delivering active substances to ablate a thin layer of tissue lining at least a portion of the renal pelvis to disrupt renal nerves within the tissue lining of the renal pelvis.

Abstract: Method of growing carbon nanotubes which are substantially vertically aligned on a diamond-based substrate via a chemical vapor deposition system utilizing an iron-based catalyst is disclosed.

Abstract: The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes locating a metal in a reaction chamber, heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber. The vapor-phase reactant and the molten metal can react through a thermal CVD process, and nanostructures can form on the surface of the molten metal. Dimensions of the nanostructures can be controlled by reaction temperature.

Abstract: A multi-threshold complementary metal-oxide semiconductor (MTCMO) bus circuit reduces bus power consumption via a reduced circuit leakage standby and pulsed control of standby mode so that the advantages of MTCMOS repeater design are realized in dynamic operation. A pulse generator pulses the high-threshold voltage power supply rail standby switching devices in response to changes detected at the bus circuit inputs. The delay penalty associated with leaving the standby mode is overcome by reducing cross-talk induced delay via a cross-talk noise minimization encoding and decoding scheme. A subgroup of bus wires is encoded and decoded, simplifying the encoding, decoding and change detection logic and results in the bus subgroup being taken out of standby mode only when changes occur in one or more of the subgroup inputs, further reducing the power consumption of the overall bus circuit.

Abstract: The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes locating a metal in a reaction chamber, heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber. The vapor-phase reactant and the molten metal can react through a thermal CVD process, and nanostructures can form on the surface of the molten metal. Dimensions of the nanostructures can be controlled by reaction temperature.