Abstract: A high-definition or high-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, and a second insulating layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer. Each of an end portion of the first pixel electrode and an end portion of the second pixel electrode is covered with the first insulating layer. The second insulating layer is positioned over the first insulating layer. The second insulating layer covers each of a side surface of the first light-emitting layer and a side surface of the second light-emitting layer.

Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixels, and the base material covers the pair of pixels and has a light-transmitting property. The pair of pixels includes one pixel and another pixel, and the one pixel includes a light-emitting device and a first microlens. The light-emitting device emits light toward the base material, and the first microlens is interposed between the base material and the light emission and converges light. The first microlens includes a first surface and a second surface; the second surface is closer to the light-emitting device than the first surface is; and the second surface has a smaller radius of curvature than the first surface. The other pixel includes a photoelectric conversion device and a second microlens. The second microlens is interposed between the base material and the photoelectric conversion and converges external light incident from the base material side.

Abstract: A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first display element including a first pixel electrode, a first EL layer, and a common electrode; a second display element including a second pixel electrode, a second EL layer, and the common electrode; a first insulating layer covering an end portion of the first pixel electrode and an end portion of the second pixel electrode; a second insulating layer over the first insulating layer; and a third insulating layer over the second insulating layer. The first EL layer is placed over the first pixel electrode and the third insulating layer. The second EL layer is placed over the second pixel electrode and the third insulating layer.

Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first conductive layer, a second conductive layer over the first conductive layer, a first light-emitting layer over the second conductive layer, and a common electrode over the first light-emitting layer. The second light-emitting device includes a third conductive layer, a fourth conductive layer over the third conductive layer, a second light-emitting layer over the fourth conductive layer, and the common electrode over the second light-emitting layer.

Abstract: A method for fabricating a display device that easily achieves higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is formed over a first pixel electrode and a second pixel electrode; a first sacrificial film is formed to cover the first EL film; the first sacrificial film and the first EL film are etched to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer; and the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching, and the first sacrificial layer is removed by wet etching.

Abstract: A method for manufacturing a display apparatus having high display quality is provided. A method for manufacturing a display apparatus including first to third insulators, first and second conductors, and first and second EL layers is provided. The first conductor is formed over the first insulator, and the second insulator is formed over the first insulator and over the first conductor. A first opening portion reaching the first conductor is formed in the second insulator. A sacrificial layer is formed over the second insulator and over a bottom surface of the first opening portion, and a resist is applied over the sacrificial layer. Light exposure and development are performed on the resist, so that a second opening portion reaching the sacrificial layer is formed in a region overlapping with the first conductor.

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, and a conductive layer; the first insulating layer, the metal oxide layer, and the conductive layer are stacked in this order over the semiconductor layer; an end portion of the first insulating layer is located inward from an end portion of the semiconductor layer; an end portion of the metal oxide layer is located inward from the end portion of the first insulating layer; and an end portion of the conductive layer is located inward from the end portion of the metal oxide layer. The second insulating layer is preferably provided to cover the semiconductor layer, the first insulating layer, the metal oxide layer, and the conductive layer.

Abstract: A display device with high resolution is provided. A display device with a high aperture ratio is provided. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, a first EL layer, a second EL layer, and a common electrode. The first insulating layer covers end portions of the first pixel electrode and the second pixel electrode. The second insulating layer is provided over the first pixel electrode, the second pixel electrode, and the first insulating layer and covers an end portion of the first insulating layer. The first EL layer is provided over the first pixel electrode and the second EL layer is provided over the second pixel electrode. An end portion of the first EL layer and an end portion of the second EL layer face each other and overlap with the first insulating layer. The common electrode includes a portion overlapping with the first EL layer and a portion overlapping with the second EL layer.

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a gate insulating layer, agate electrode, a first insulating layer, a second insulating layer, and a conductive layer. The gate insulating layer is in contact with a top surface and a side surface of the semiconductor layer, and the gate electrode includes a region overlapping with the semiconductor layer with the gate insulating layer therebetween. The first insulating layer contains an inorganic material and is in contact with a top surface of the gate insulating layer and a top surface and a side surface of the gate electrode. The gate insulating layer and the first insulating layer include a first opening in a region overlapping with the semiconductor layer.

Abstract: A semiconductor device including a transistor with high on-state current and a fabrication method thereof are provided. A semiconductor device having favorable electrical characteristics and a fabrication method thereof are provided. The semiconductor device includes a substrate, an island-shaped insulating layer over the substrate, and a transistor over the substrate and the insulating layer. The transistor includes a gate electrode, a gate insulating layer, a semiconductor layer, and a pair of conductive layers. One of the pair of the conductive layers includes a region overlapping with the insulating layer, and the other of the pair of the conductive layers includes a region not overlapping with the insulating layer. The level of a top surface of the other of the pair of the conductive layers is lower than the level of a top surface of the one of the pair of the conductive layers. Each of the pair of the conductive layers is in contact with the semiconductor layer.

Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixels, and the base material covers the pair of pixels and has a light-transmitting property. The pair of pixels includes one pixel and another pixel, and the one pixel includes a light-emitting device and a first microlens. The light-emitting device emits light toward the base material, and the first microlens is interposed between the base material and the light emission and converges light. The first microlens includes a first surface and a second surface; the second surface is closer to the light-emitting device than the first surface is; and the second surface has a smaller radius of curvature than the first surface. The other pixel includes a photoelectric conversion device and a second microlens. The second microlens is interposed between the base material and the photoelectric conversion and converges external light incident from the base material side.

Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

Abstract: A transistor in which shape defects are unlikely to occur is provided. A transistor with favorable electrical characteristics is provided. A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a transistor. The transistor includes a semiconductor layer, a first insulating layer, a metal oxide layer, a functional layer, and a conductive layer. The first insulating layer is positioned over the semiconductor layer. The metal oxide layer is positioned over the first insulating layer. The functional layer is positioned over the metal oxide layer. The conductive layer is positioned over the functional layer. The semiconductor layer, the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer have regions overlapping with each other.

Abstract: A high-definition or high-resolution display apparatus is provided. In the display apparatus, a first light-emitting device includes a first pixel electrode, a first light-emitting layer, and a common electrode. A second light-emitting device includes a second pixel electrode, a second light-emitting layer, and the common electrode. End portions of the first and second pixel electrodes are covered with a first insulating layer. A second insulating layer covers side surfaces of the first and second light-emitting layers. A first color conversion layer overlaps the first light-emitting device. A second color conversion layer overlaps the second light-emitting device. The first and second light-emitting devices each have a function of emitting blue light. The first and second color conversion layers each have a function of converting light.

Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixels, and the base material covers the pair of pixels and has a light-transmitting property. The pair of pixels includes one pixel and another pixel, and the one pixel includes a light-emitting device and a first microlens. The light-emitting device emits light toward the base material, and the first microlens is interposed between the base material and the light emission and converges light. The first microlens includes a first surface and a second surface; the second surface is closer to the light-emitting device than the first surface is; and the second surface has a smaller radius of curvature than the first surface. The other pixel includes a photoelectric conversion device and a second microlens. The second microlens is interposed between the base material and the photoelectric conversion and converges external light incident from the base material side.

Abstract: A novel light-emitting device that is highly convenient, useful, or reliable is provided. A novel functional panel that is highly convenient, useful, or reliable is provided. The light-emitting device includes an insulating film, a group of structure bodies, a layer containing a light-emitting material, a first electrode, and a second electrode. The group of structure bodies includes a structure body and a different structure body, a first distance is provided between the different structure body and the structure body, the insulating film includes a first surface, the structure body includes a sidewall, the sidewall forms a first angle with the first surface, and the first angle is greater than 0° and less than or equal to 90°.

Abstract: A display device having a function of sensing light is provided. The display device includes a first substrate, a second substrate, a light-receiving element, a light-emitting element, a resin layer, and a light shielding layer. The light-receiving element, the light-emitting element, the resin layer, and the light shielding layer are each positioned between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode over the first substrate, an active layer over the first pixel electrode, and a common electrode over the active layer. The light-emitting element includes a second pixel electrode over the first substrate, a first light-emitting layer over the second pixel electrode, and the common electrode over the first light-emitting layer. The resin layer and the light shielding layer are each positioned between the common electrode and the second substrate. The resin layer includes a portion overlapping with the light-emitting element.

Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, and a conductive layer; the first insulating layer, the metal oxide layer, and the conductive layer are stacked in this order over the semiconductor layer; an end portion of the first insulating layer is located inward from an end portion of the semiconductor layer; an end portion of the metal oxide layer is located inward from the end portion of the first insulating layer; and an end portion of the conductive layer is located inward from the end portion of the metal oxide layer. The second insulating layer is preferably provided to cover the semiconductor layer, the first insulating layer, the metal oxide layer, and the conductive layer.

Abstract: A transistor in which shape defects are unlikely to occur is provided. A transistor with favorable electrical characteristics is provided. A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a transistor. The transistor includes a semiconductor layer, a first insulating layer, a metal oxide layer, a functional layer, and a conductive layer. The first insulating layer is positioned over the semiconductor layer. The metal oxide layer is positioned over the first insulating layer. The functional layer is positioned over the metal oxide layer. The conductive layer is positioned over the functional layer. The semiconductor layer, the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer have regions overlapping with each other.