Patents by Inventor Raija Matero
Raija Matero has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220341040Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.Type: ApplicationFiled: July 12, 2022Publication date: October 27, 2022Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaako Anttila, Yukihiro Mori
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Patent number: 11421321Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.Type: GrantFiled: July 28, 2015Date of Patent: August 23, 2022Assignee: ASM IP HOLDING B.V.Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaakko Anttila, Yukihiro Mori
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Patent number: 11081342Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process.Type: GrantFiled: April 28, 2017Date of Patent: August 3, 2021Assignee: ASM IP HOLDING B.V.Inventors: Elina Färm, Hidemi Suemori, Raija Matero, Antti Niskanen, Suvi P. Haukka, Eva Tois
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Patent number: 10204790Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.Type: GrantFiled: July 28, 2015Date of Patent: February 12, 2019Assignee: ASM IP Holding B.V.Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaako Anttila, Yukihiro Mori
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Publication number: 20170323776Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process.Type: ApplicationFiled: April 28, 2017Publication date: November 9, 2017Inventors: Elina Färm, Hidemi Suemori, Raija Matero, Antti Niskanen, Suvi P. Haukka
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Publication number: 20170032956Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.Type: ApplicationFiled: July 28, 2015Publication date: February 2, 2017Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaako Anttila, Yukihiro Mori
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Publication number: 20170029947Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.Type: ApplicationFiled: July 28, 2015Publication date: February 2, 2017Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaakko Anttila, Yukihiro Mori
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Patent number: 9023427Abstract: Atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD process, wherein the process comprises at least two individual metal oxide deposition cycles. The method provided herein has particular advantages in producing multi-component oxide films having superior uniformity. A method is presented, for example, including depositing multi-component oxide films comprising components A?B?O by ALD comprising mixing two individual metal oxides deposition cycles A+O and B+O, wherein the subcycle order is selected in such way that as few as possible consecutive deposition subcycles for A+O or B+O are performed.Type: GrantFiled: May 16, 2012Date of Patent: May 5, 2015Assignee: ASM IP Holding B.V.Inventors: Raija Matero, Tom Blomberg
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Patent number: 8685165Abstract: Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapor phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.Type: GrantFiled: September 28, 2007Date of Patent: April 1, 2014Assignee: ASM International N.V.Inventors: Antti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki
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Publication number: 20130309417Abstract: The present application relates generally to atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD process, wherein the process comprises at least two individual metal oxide deposition cycles. The method provided herein has particular advantages in producing multi-component oxide films having superior uniformity. A method is presented, for example, including depositing multi-component oxide films comprising components A-B-O by ALD comprising mixing two individual metal oxides deposition cycles A+O and B+O, wherein the subcycle order is selected in such way that as few as possible consecutive deposition subcycles for A+O or B+O are performed.Type: ApplicationFiled: May 16, 2012Publication date: November 21, 2013Applicant: ASM IP HOLDING B.V.Inventors: Raija Matero, Tom Blomberg
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Publication number: 20080072819Abstract: Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.Type: ApplicationFiled: September 28, 2007Publication date: March 27, 2008Applicant: ASM INTERNATIONAL N.V.Inventors: Antti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki
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Publication number: 20060219157Abstract: Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.Type: ApplicationFiled: December 22, 2005Publication date: October 5, 2006Inventors: Antti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki