Patents by Inventor Raik Hesse

Raik Hesse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the in-situ determination of the material composition of optically thin layers
    Patent number: 8338194
    Abstract: A method for in situ determination of a material composition of optically thin layers deposited from a vapor phase onto a substrate includes irradiating the substrate with incoherent light of at least three different wavelengths, optically detecting in a spatially resolved manner a reflection intensity of a diffuse or a direct light scattering emanating from a deposited layer outside of a total reflection, concurrently providing numerical values of the detected reflection intensity to an optical layer model based on general line transmission theory, ascertaining values for the optical layer parameters of the deposited layer from the optical layer model for the at least three different wavelengths by numerically adapting the optical layer model to a time characteristic of the detected reflection intensities, and quantitatively determining a material composition of the deposited layer from the ascertained values by comparing the ascertained values to standard values.
    Type: Grant
    Filed: July 9, 2008
    Date of Patent: December 25, 2012
    Assignee: Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH
    Inventors: Raik Hesse, Hans-Werner Schock, Daniel Abou-Ras, Thomas Unold
  • METHOD AND SYSTEM FOR THE IN-SITU DETERMINATION OF THE MATERIAL COMPOSITION OF OPTICALLY THIN LAYERS
    Publication number: 20100291714
    Abstract: A system and method for in situ determination of a material composition of optically thin layers deposited from a vapor phase onto a substrate includes irradiating the substrate with incoherent light of at least three different wavelengths, optically detecting in a spatially resolved manner a reflection intensity of a diffuse or a direct light scattering emanating from a deposited layer outside of a total reflection, concurrently providing numerical values of the detected reflection intensity to an optical layer model based on general line transmission theory, ascertaining values for the optical layer parameters of the deposited layer from the optical layer model for the at least three different wavelengths by numerically adapting the optical layer model to a time characteristic of the detected reflection intensities, and quantitatively determining a material composition of the deposited layer from the ascertained values by comparing the ascertained values to standard values.
    Type: Application
    Filed: July 9, 2008
    Publication date: November 18, 2010
    Applicant: Helmholtz-Zentrum Berlin Fuer Materialien und Energie GmbH
    Inventors: Raik Hesse, Hans-Werner Schock, Daniel Abou-Ras, Thomas Unold