Abstract: The invention is a method and an analysis device for determining an oscillation pattern of a substance without using an excitation source for the substance. The analysis device comprises a central unit having two identical sample containers, two microphone apparatuses, and a differential amplifier; wherein: one of the microphone apparatuses is located in each of the sample containers; the microphone apparatuses are electronically coupled to the differential amplifier via respective connecting lines; the connecting lines are of identical design; and the differential amplifier is designed to compensate for in-phase parasitic oscillations from both sample containers and, when the substance is introduced into one of the two sample containers, to determine the oscillation pattern of the substance without using an excitation source for the substance.

Abstract: The invention is a method and an analysis device for determining an oscillation pattern of a substance without using an excitation source for the substance. The analysis device comprises a central unit having two identical sample containers, two microphone apparatuses, and a differential amplifier; wherein: one of the microphone apparatuses is located in each of the sample containers; the microphone apparatuses are electronically coupled to the differential amplifier via respective connecting lines; the connecting lines are of identical design; and the differential amplifier is designed to compensate for in-phase parasitic oscillations from both sample containers and, when the substance is introduced into one of the two sample containers, to determine the oscillation pattern of the substance without using an excitation source for the substance.

Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.

Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.

Abstract: The invention relates to a device for coating a surface of a wafer. The device includes a retaining system for placing the wafer on a retaining surface, a nozzle system for coating the wafer in a Z-direction, and a ring having an inside periphery that surrounds a side periphery of the wafer (2), wherein the ring can be arranged for expanding a coating surface when coating the wafer.