Abstract: A radiation-emitting component is specified with a carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

Abstract: A radiation-emitting component is specified with—a carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

Abstract: A radiation-emitting component is specified with—a carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

Abstract: The invention concerns a method for producing an optoelectronic component (100) comprising the steps: A) providing a carrier (1), B) applying an adhesive (2) on the carrier (1), C) applying a radiation-emitting semiconductor chip (3) having a main radiation surface (31) and side surfaces (32) on the carrier (1) so that the adhesive (2) covers the main radiation surface (31) and the side surfaces (32) of the semiconductor chip (3) at least predominantly and obliquely, D) applying a reflector layer (5) at least on an outer adhesive surface (21), which are arranged obliquely to the side surfaces (32) of the semiconductor chip (3), wherein the carrier (1) is removed again after step C), if applicable.