Abstract: Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and whose band gap is smaller than the band gap of the surrounding substrate, and a method of making the epitaxial substrate. Further described is a method of making a thin-film semiconductor chip, particularly an LED, wherein an epitaxial substrate is prepared, wherein at least one LED structure is grown on said epitaxial substrate and the LED structure is bonded to an acceptor substrate, and wherein the semiconductor wafer is released by at least partially destroying the sacrificial layer, and the at least one LED structure is singulated.

Abstract: A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.

Abstract: In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

Abstract: Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and whose band gap is smaller than the band gap of the surrounding substrate, and a method of making the epitaxial substrate. Further described is a method of making a thin-film semiconductor chip, particularly an LED, wherein an epitaxial substrate is prepared, wherein at least one LED structure is grown on said epitaxial substrate and the LED structure is bonded to an acceptor substrate, and wherein the semiconductor wafer is released by at least partially destroying the sacrificial layer, and the at least one LED structure is singulated.

Abstract: In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.