Patents by Inventor Rainer HOLZHAIDER

Rainer HOLZHAIDER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with through-substrate via and corresponding method of manufacture
    Patent number: 10468541
    Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: November 5, 2019
    Assignee: ams AG
    Inventors: Franz Schrank, Sara Carniello, Hubert Enichlmair, Jochen Kraft, Bernhard Loeffler, Rainer Holzhaider
  • SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND CORRESPONDING METHOD OF MANUFACTURE
    Publication number: 20160322519
    Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.
    Type: Application
    Filed: December 12, 2014
    Publication date: November 3, 2016
    Inventors: Franz SCHRANK, Sara CARNIELLO, Hubert ENICHLMAIR, Jochen KRAFT, Bernhard LOEFFLER, Rainer HOLZHAIDER