Abstract: A rotor for a device for disintegrating feed material, comprising a drive shaft, a plurality of rotor disks mounted on the drive shaft, and disintegration tools arranged in the region of the outer circumference of the rotor disks. A holding flange is provided for each rotor disk for connecting the rotor disk to the drive shaft, wherein the holding flange is permanently connected to the drive shaft and detachably connected to the rotor disk. Devices for disintegrating feed material, in particular impact hammer mills, may thus be operated with a rotor, in which the risk of a shaking out and a lateral wandering of the rotor disks is largely eliminated.

Abstract: A rotor for a device for disintegrating feed material, comprising a drive shaft, a plurality of rotor disks mounted on the drive shaft, and disintegration tools arranged in the region of the outer circumference of the rotor disks. A holding flange is provided for each rotor disk for connecting the rotor disk to the drive shaft, wherein the holding flange is permanently connected to the drive shaft and detachably connected to the rotor disk. Devices for disintegrating feed material, in particular impact hammer mills, may thus be operated with a rotor, in which the risk of a shaking out and a lateral wandering of the rotor disks is largely eliminated.

Abstract: An etching gas mixture containing CHF3, SF6 and a non-oxidizing gas such as Ar is used as an etching gas mixture for the anisotropic plasma-chemical dry-etching of a silicon nitride layer differentially or selectively relative to a silicon oxide layer. The gas mixture does not contain oxygen, chlorine, bromine, iodine or halides in addition to the above mentioned constituents, so that the process can be carried out in reactor systems equipped with oxidizable electrodes. By adjusting the gas flow rates or composition ratios of CHF3, SF6, and argon in the etching gas mixture, it is possible to adjust the resulting etching selectivity of silicon nitride relative to silicon oxide, and the particular edge slope angle of the etched edge of the remaining silicon nitride layer. A high etch rate for the silicon nitride is simultaneously achieved.