Patents by Inventor Rainer Kurps

Rainer Kurps has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer
    Patent number: 7196382
    Abstract: The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer (14) that contains for example praseodymium oxide is deposited onto a prepared wafer (12). A silicon layer (16) and on top of said silicon layer a cover layer (18) is deposited onto the metal oxide layer (14), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer (16) and the metal oxide layer (14) are converted to a metal silicide layer in lateral sections (20, 22) in which the cover layer (18) was previously removed.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: March 27, 2007
    Assignee: IHP GmbH Innovations for High Performance Microelectronics/ Institut fur Innovative Mikroelektronik
    Inventors: Elena Krüger, legal representative, Andriy Goryachko, Rainer Kurps, Jing Ping Liu, Hans-Jörg Osten, Dietmar Krüger, deceased
  • Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer
    Publication number: 20050227466
    Abstract: The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer (14) that contains for example praseodymium oxide is deposited onto a prepared wafer (12). A silicon layer (16) and on top of said silicon layer a cover layer (18) is deposited onto the metal oxide layer (14), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer (16) and the metal oxide layer (14) are converted to a metal silicide layer in lateral sections (20, 22) in which the cover layer (18) was previously removed.
    Type: Application
    Filed: May 24, 2002
    Publication date: October 13, 2005
    Inventors: Dietmar Kruger, Andriy Goryachko, Rainer Kurps, Jing Liu, Hans-Jorg Osten
  • Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom
    Patent number: 6358823
    Abstract: A method of fabricating ion implanted doping layers in semiconductor materials by subjecting the material to an ultrasonic treatment during the implantation of predetermined impurities. In an alternate embodiment ultrasonic vibrations are generated by primary ion currents of sufficient density reflected by a piezo-electric element applied to the semiconductor material.
    Type: Grant
    Filed: April 12, 2000
    Date of Patent: March 19, 2002
    Assignee: Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH.
    Inventors: Dietmar Krueger, Rainer Kurps, Boris Romanjuk, Viktor Melnik, Jaroslav Olich