Abstract: A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of ?/??>1000, means for the broadband spectral filtering ?/??<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

Abstract: A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of ?/??>1000, means for the broadband spectral filtering ?/??<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

Abstract: The invention concerns an irradiation device for testing objects coated with light-sensitive paint, comprising a EUV radiation source, an optical system for filtering the radiation of the EUV radiation source a chamber for receiving the object, as well as systems for intersecting the trajectory of the rays on the object. The invention also concerns a method for operating such a device. The invention aims at obtaining as quickly as possible an illumination at least partly simultaneous of several irradiation fields, with different doses, by using an inexpensive laboratory radiation source without resorting to complex optical systems. Therefor, the invention provides a device comprising a simplified and compact optical system, with closable diaphragm apertures located in front of the object to be irradiated and at least one control sensor placed on the trajectory of the rays and enabling the radiation dose to be measured.

Abstract: The invention concerns an irradiation device for testing objects coated with light-sensitive paint, comprising a EUV radiation source, an optical system for filtering the radiation of the EUV radiation source a chamber for receiving the object, as well as systems for intersecting the trajectory of the rays on the object. The invention also concerns a method for operating such a device. The invention aims at obtaining as quickly as possible an illumination at least partly simultaneous of several irradiation fields, with different doses, by using an inexpensive laboratory radiation source without resorting to complex optical systems. Therefor, the invention provides a device comprising a simplified and compact optical system, with closable diaphragm apertures located in front of the object to be irradiated and at least one control sensor placed on the trajectory of the rays and enabling the radiation dose to be measured.

Abstract: In a reflectometer arrangement and a method for determining the reflectance of selected measurement locations on measurement objects reflecting in a spectrally dependent manner, the object of the invention is to reduce the time for measuring a measurement object with a robust and simple measurement structure to such an extent that compact radiation sources with low output compared to a synchrotron can be used at the site of production or of use of the measurement object to characterize the object characteristics in a manner suited to series production. A measurement beam bundle proceeding from a polychromatically emitting radiation source is directed onto the measurement location of the measurement object sequentially in modified manner by impressing spectral reference reflection characteristics and the radiation reflected from every measurement location is detected integrally.

Abstract: The invention relates to a device for generating extreme ultraviolet and soft x-rays from a gas discharge, operated on the left-hand branch of the Paschen curve. There are two main electrodes, between which there is a gas-filled space, and each main electrode exhibits an opening, by means of which an axis of symmetry [(5)] is defined; and there are means to increase the conversion efficiency. Preferred fields of application are those requiring extreme ultraviolet (EUV) radiation or soft x-rays at a wavelength ranging from approximately 1 to 20 nm, and in particular around 13 nm, such as in EUV lithography.

Abstract: In a reflectometer arrangement and a method for determining the reflectance of selected measurement locations on measurement objects reflecting in a spectrally dependent manner, the object of the invention is to reduce the time for measuring a measurement object with a robust and simple measurement structure to such an extent that compact radiation sources with low output compared to a synchrotron can be used at the site of production or of use of the measurement object to characterize the object characteristics in a manner suited to series production. A measurement beam bundle proceeding from a polychromatically emitting radiation source is directed onto the measurement location of the measurement object sequentially in modified manner by impressing spectral reference reflection characteristics and the radiation reflected from every measurement location is detected integrally.

Abstract: A method and a device for generating extreme ultraviolet (EUV) and soft x-ray radiation from a gas discharge. The device has at least two electrodes each having a flush opening by which an axis of symmetry is defined, in which an intermediate space with a wide spatial homogenous gas filling between anode and cathode is provided. The electrodes are formed in such a way, that the gas discharge is formed exclusively in the volume defined by the flush openings. The current pulses with respect to amplitude and period duration are selected in such a way that a dense hot plasma channel is formed on the axis of symmetry, the plasma being the source of EUV and/or soft x-ray radiation. The preferred area of application is the EUV projection lithography in the spectral range around 13 nm.

Abstract: The invention is an improvement in a device for generating X-radiation with a plasma source. In the device, two concentric cylindrical electrodes (11, 12) are separated by an evacuated discharge space (13) filled with low-pressure gas. When the inner electrode is momentarily raised to an extremely high voltage, the gas is ionized and a plasma shock wave (17, 17') is created and compressed into a plasma focus (21) emitting X-radiation (20). The improvement introduces a first ("discharge") gas into the discharge space for initiation of the plasma, while introducing a second ("emitting") gas into the inner electrode for generating the X-radiation in the plasma focus. Special features of the improved device include a plurality of gas extraction ports, which can be used independently or together, and which can be combined with variations in the introduction and flow of the two gases to control the movement and intermixture of the gases and, thereby, the operation of the device.