Abstract: In a method for fabricating a field effect transistor, a first source/drain region and a second source/drain region are formed in a substrate. A channel region is formed between the first source/drain region and the second source/drain region. A gate region is formed on the channel region. Micro-cavities are formed in the substrate at least below the channel region, and the micro-cavities are oxidized.

Abstract: In a method for fabricating a field effect transistor, a first source/drain region and a second source/drain region are formed in a substrate. A channel region is formed between the first source/drain region and the second source/drain region. A gate region is formed on the channel region. Micro-cavities are formed in the substrate at least below the channel region, and the micro-cavities are oxidized.

Abstract: A method for fabricating a semiconductor device including implanting a selected material at a desired target depth below a surface of a silicon substrate, performing an annealing process to create a band of precipitates formed from the selected material and the silicon of the silicon substrate at the desired target depth, and forming a source region and a drain region in the substrate such that a channel region there between is positioned above the band of precipitates, wherein the desired target depth is such that a desired separation distance is achieved between the channel region and the band of precipitates, and wherein an average lattice constant of the band of precipitates is different from the average lattice constant of the silicon substrate so as to cause a stress in the channel region.

Abstract: A method for fabricating a semiconductor device including implanting a selected material at a desired target depth below a surface of a silicon substrate, performing an annealing process to create a band of precipitates formed from the selected material and the silicon of the silicon substrate at the desired target depth, and forming a source region and a drain region in the substrate such that a channel region there between is positioned above the band of precipitates, wherein the desired target depth is such that a desired separation distance is achieved between the channel region and the band of precipitates, and wherein an average lattice constant of the band of precipitates is different from the average lattice constant of the silicon substrate so as to cause a stress in the channel region.

Abstract: In a method for fabricating a field effect transistor, a first source/drain region and a second source/drain region are formed in a substrate. A channel region is formed between the first source/drain region and the second source/drain region. A gate region is formed on the channel region. Micro-cavities are formed in the substrate at least below the channel region, and the micro-cavities are oxidized.