Abstract: The present invention relates to two processes for the treatment of antimicrobially, in particular antibacterially, acting quinolone- and naphthyridonecarboxylic acids and derivatives thereof with wood rot fungi, if appropriate in the presence of water and/or inert solid or liquid substrates and further auxiliaries.

Abstract: A method for measuring and controlling the oxygen concentration in silicon melts which are contained in a silica glass crucible or which can be touched by a silica glass surface can especially be used for achieving a defined, uniform axial and radial oxygen concentration in a growing silicon crystal. The measurement of the oxygen concentration is realized by an electrochemical solid ionic sensor dipped into the melt; the voltage is measured between the sensor and the growing silicon crystal. The oxygen concentration in the melt is controlled by applying a voltage between crystal and silica glass crucible. The apparatus for putting the method into practice includes an electrochemical solid ionic sensor formed of a silica glass tube which encloses a metal/metal oxide mixture, contacted by a metal wire.

Abstract: A measuring apparatus for X-ray fluorescence analysis in which the specimen s stimulated by glancing incident radiation and is examined spectrometrically by a detector disposed above the specimen. In the path of rays of the stimulating X-radiation there is disposed a reflector which in operation deflects the X-radiation to the surface of the specimen.

Abstract: A measuring device for X-ray fluorescence analysis, in which a specimen dosed on a carrier is stimulated by glancing incident radiation and examined spectrometrically by a detector which may be arranged above the specimen. On the upper side of an e.g., box-shaped housing in which a vacuum can be created, there is provided a detector extending into the interior of the housing. This detector is connected to the housing by means of a pivotable frame within the housing. The pivot axis of the frame is located in the measuring plane of the detector. Provided on the pivotable frame is a remote controllable specimen exchanger and a remote controllable disengaging device for shifting the specimen carrier out of its operative position, the disengaging device being substantially aligned with the detector axis. The pivotable frame has furthermore provided thereon counter bearings for the specimen carriers; these counter bearings surround the measuring region.

Abstract: A manufacturing method for depositing an Nb.sub.3 Sn layer on a niobium surface for high frequency applications comprising developing a tin vapor atmosphere which also contains a highly volatile tin compound in the gaseous state, and holding the portions of the surface which are to be provided with the Nb.sub.3 Sn layer at a temperature of between 900.degree. and 1500.degree. C for a predetermined period of time to form the Nb.sub.3 Sn layer permitting niobium surfaces of any shape to be provided with Nb.sub.3 Sn layers of high uniformity and quality.

Abstract: An apparatus for the quantitative in-line X-ray fluorescence analysis of rries by means of a radioactive preparation, e.g. Cd-109, and an X-ray fluorescence detector. The apparatus comprises a substantially vertical measuring tube with inlet and outlet for the slurries to be investigated, and a measuring station. Above the measuring station which contains the radioactive preparations and the fluorescence detector there is provided a filling level control which controls the state of opening of the outlet.

Abstract: A method for the manufacture of a superconductive Nb.sub.3 Sn layer on a niobium surface for high frequency applications in which the niobium surface to be provided with an Nb.sub.3 Sn layer is first anodically oxidized, the niobium oxide layer produced in this manner then exposed to a tin vapor atmosphere in such a way that a tin layer is formed on the niobium oxide layer, and finally, the niobium surface is heated to a temperature of between 930.degree. and about 1400.degree. C for forming the Nb.sub.3 Sn layer.