Patents by Inventor Rainer Minixhofer
Rainer Minixhofer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240321932Abstract: In an embodiment a method for fabricating a photodetector device includes providing a carrier substrate, wherein a device layer is arranged at a main surface of the carrier substrate, and an insulating layer is arranged between the device layer and the carrier substrate, forming a plurality of photodetector elements in the device layer, forming an intermetal dielectric on the device layer, wherein contact pads electrically connected to the photodetector elements are embedded in the intermetal dielectric, forming pad openings in the intermetal dielectric, the pad openings reaching the contact pads so that the contact pads are accessible via the pad openings, mounting a handling substrate on the intermetal dielectric, removing the carrier substrate, singulating the plurality of photodetector elements such that a plurality of separate photodetector chips comprising one photodetector element are formed and releasing the photodetector chips from the handling substrate.Type: ApplicationFiled: June 13, 2022Publication date: September 26, 2024Inventors: Rainer Minixhofer, Jörg Siegert, Angus Chan, Franz Schrank
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Patent number: 11448730Abstract: An optical sensor arrangement for time-of-flight comprises a first and a second cavity separated by an optical barrier and covered by a cover arrangement. An optical emitter is arranged in the first cavity, a measurement and a reference photodetector are arranged in the second cavity. The cover arrangement comprises a plate and layers of material arranged on an inner main surface thereof. The layers comprise an opaque coating with a first and second aperture above the first cavity, and with a third and fourth aperture above the second cavity. The measurement photodetector is configured to detect light entering the second cavity through the fourth aperture. The second and the third aperture establish a reference path for light from the emitter to the reference photodetector.Type: GrantFiled: June 2, 2017Date of Patent: September 20, 2022Assignee: AMS AGInventors: Harald Etschmaier, Rainer Minixhofer, Georg Roehrer
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Publication number: 20220244168Abstract: An apparatus includes an integrated waveguide structure, and a first light source operable to produce a probe beam having a first wavelength, wherein the probe beam is coupled into a first end of the waveguide structure. A second light source is operable to produce an excitation beam with having a second wavelength to excite gas molecules in close proximity to a path of the probe beam. A light detector is coupled to a second end of the integrated waveguide structure and is operable to detect the probe beam after it passes through the waveguide structure. The apparatus is operable such that excitation of the gas molecules results in a temperature increase of the gas molecules that induces a change in the probe beam that is measurable by the light detector.Type: ApplicationFiled: July 9, 2020Publication date: August 4, 2022Inventors: Jochen Kraft, Rainer Minixhofer, Victor Sidorov, Anderson Singulani, Martin Sagmeister, Fernando Castano
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Patent number: 10636777Abstract: We disclose an Infrared (IR) device comprising a first substrate comprising a first cavity; a dielectric layer disposed on the first substrate; a second substrate disposed on the dielectric layer and on the opposite side of the first substrate, the second substrate having a second cavity. The device further comprises an optically transmissive layer attached to one of the first and second substrates; a further layer provided to another of the first and second substrates so that the IR device is substantially closed. Holes are provided through the dielectric layer so that a pressure in the first cavity is substantially the same level as a pressure in the second cavity.Type: GrantFiled: December 22, 2017Date of Patent: April 28, 2020Assignee: AMS SENSORS UK LIMITEDInventors: Florin Udrea, Syed Zeeshan Ali, Richard Henry Hopper, Rainer Minixhofer
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Patent number: 10374114Abstract: The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.Type: GrantFiled: March 11, 2014Date of Patent: August 6, 2019Assignee: ams AGInventors: Jordi Teva, Frederic Roger, Ewald Stueckler, Stefan Jessenig, Rainer Minixhofer, Ewald Wachmann, Martin Schrems, Guenther Koppitsch
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Publication number: 20190198487Abstract: We disclose an Infrared (IR) device comprising a first substrate comprising a first cavity; a dielectric layer disposed on the first substrate; a second substrate disposed on the dielectric layer and on the opposite side of the first substrate, the second substrate having a second cavity. The device further comprises an optically transmissive layer attached to one of the first and second substrates; a further layer provided to another of the first and second substrates so that the IR device is substantially closed. Holes are provided through the dielectric layer so that a pressure in the first cavity is substantially the same level as a pressure in the second cavity.Type: ApplicationFiled: December 22, 2017Publication date: June 27, 2019Inventors: Florin Udrea, Syed Zeeshan Ali, Richard Henry Hopper, Rainer Minixhofer
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Publication number: 20190146069Abstract: An optical sensor arrangement for time-of-flight comprises a first and a second cavity separated by an optical barrier and covered by a cover arrangement. An optical emitter is arranged in the first cavity, a measurement and a reference photodetector are arranged in the second cavity. The cover arrangement comprises a plate and layers of material arranged on an inner main surface thereof. The layers comprise an opaque coating with a first and second aperture above the first cavity, and with a third and fourth aperture above the second cavity. The measurement photodetector is configured to detect light entering the second cavity through the fourth aperture. The second and the third aperture establish a reference path for light from the emitter to the reference photodetector.Type: ApplicationFiled: June 2, 2017Publication date: May 16, 2019Inventors: Harald Etschmaier, Rainer Minixhofer, Georg Roehrer
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Patent number: 9947711Abstract: The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (17) comprising recesses (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element may be arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance. The focusing element (17) is formed by etching the recesses (4) into the semiconductor material.Type: GrantFiled: February 10, 2015Date of Patent: April 17, 2018Assignee: AMS AGInventors: Rainer Minixhofer, Martin Schrems, Sara Carniello
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Patent number: 9842946Abstract: The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).Type: GrantFiled: May 22, 2015Date of Patent: December 12, 2017Assignee: AMS AGInventors: Rainer Minixhofer, Bernhard Stering, Harald Etschmaier
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Patent number: 9837573Abstract: The method comprises the steps of providing a semiconductor device comprising a semiconductor layer (1) with at least one radiation sensor (6) and a dielectric layer (2), arranging a web (3) comprising a plurality of recesses (4) on the dielectric layer, and introducing ink of different colors (A, B, C) in the recesses by inkjets (I).Type: GrantFiled: February 4, 2014Date of Patent: December 5, 2017Assignee: AMS AGInventor: Rainer Minixhofer
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Patent number: 9577001Abstract: The integrated imaging device comprises a substrate (1) with an integrated circuit (4), a cover (2), a cavity (6) enclosed between the substrate (1) and the cover (2), and a sensor (5) or an array of sensors (5) arranged in the cavity (6). A surface (11, 12) of the substrate (1) or the cover (2) opposite the cavity (6) has a structure (8) directing incident radiation. The surface structure (8) may be a plate zone or a Fresnel lens focusing infrared radiation and may be etched into the surface of the substrate or cover, respectively.Type: GrantFiled: April 15, 2014Date of Patent: February 21, 2017Assignee: AMS AGInventors: Hubert Enichlmair, Rainer Minixhofer, Martin Schrems
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Patent number: 9443759Abstract: A cutout (11), which penetrates the semiconductor body, is present in the semiconductor body (1). A conductor layer (6), which is electrically conductively connected to a metal plane (3) on or over the semiconductor body, screens the semiconductor body electrically from the cutout. The conductor layer can be metal, optionally with a barrier layer (6a), or a doped region of the semiconductor body.Type: GrantFiled: May 16, 2012Date of Patent: September 13, 2016Assignee: AMS AGInventors: Rainer Minixhofer, Ewald Stückler, Martin Schrems, Günther Koppitsch, Jochen Kraft, Jordi Teva
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Patent number: 9018726Abstract: The photodiode has a p-type doped region (2) and an n-type doped region (3) in a semiconductor body (1), and a pn junction (4) between the p-type doped region and the n-type doped region. The semiconductor body has a cavity (5) such that the pn junction (4) has a distance (d) of at most 30 ?m from the bottom of the cavity (7).Type: GrantFiled: May 4, 2012Date of Patent: April 28, 2015Assignee: ams AGInventors: Jochen Kraft, Ingrid Jonak-Auer, Rainer Minixhofer, Jordi Teva, Herbert Truppe
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Patent number: 8969961Abstract: A semiconductor body (10) comprises a field-effect transistor (11). The field-effect transistor (11) comprises a drain region (12) of a first conduction type, a source region (13) of the first conduction type, a drift region (16) and a channel region (14) of a second conduction type which is opposite to the first conduction type. The drift region (16) comprises at least two stripes (15, 32) of the first conduction type which extend from the drain region (12) in a direction towards the source region (13). The channel region (14) is arranged between the drift region (16) and the source region (13).Type: GrantFiled: November 7, 2008Date of Patent: March 3, 2015Assignee: AMS AGInventors: Jong Mun Park, Verena Vescoli, Rainer Minixhofer
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Publication number: 20140203340Abstract: The photodiode has a p-type doped region (2) and an n-type doped region (3) in a semiconductor body (1), and a pn junction (4) between the p-type doped region and the n-type doped region. The semiconductor body has a cavity (5) such that the pn junction (4) has a distance (d) of at most 30 ?m from the bottom of the cavity (7).Type: ApplicationFiled: May 4, 2012Publication date: July 24, 2014Applicant: AMS AGInventors: Jochen Kraft, Ingrid Jonak-Auer, Rainer Minixhofer, Jordi Teva, Herbert Truppe
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Publication number: 20140191413Abstract: A cutout (11), which penetrates the semiconductor body, is present in the semiconductor body (1). A conductor layer (6), which is electrically conductively connected to a metal plane (3) on or over the semiconductor body, screens the semiconductor body electrically from the cutout. The conductor layer can be metal, optionally with a barrier layer (6a), or a doped region of the semiconductor body.Type: ApplicationFiled: May 16, 2012Publication date: July 10, 2014Applicant: ams AGInventors: Rainer Minixhofer, Ewald Stückler, Martin Schrems, Günther Koppitsch, Jochen Kraft, Jordi Teva
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Patent number: 8525331Abstract: A chip design (1) comprising an external supply connection (VBAT), an internal supply connection (VDD), an integrated circuit (2) that is coupled to the internal supply connection (VDD) for voltage supply, and a fuse (3) that electrically connects the internal supply connection (VBAT) and is arranged within the chip design (1).Type: GrantFiled: November 23, 2009Date of Patent: September 3, 2013Assignee: AMS AGInventors: Karl Ilzer, Rainer Minixhofer, Mario Manninger
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Patent number: 8426936Abstract: Through a main surface (10) of a semiconductor substrate (1) of a first type of conductivity, a doped well of a second type of conductivity is implanted to form a sensor region (3) extending perpendicularly to the main surface. The sensor region can be confined laterally by trenches (5) comprising an electrically insulating trench filling (6). The bottom of the sensor region is insulated by a pn-junction (20). Contacts (4) are applied to the main surface and provided for the application of an operation voltage and the measurement of a Hall voltage.Type: GrantFiled: March 24, 2010Date of Patent: April 23, 2013Assignee: austriamicrosystems AGInventors: Rainer Minixhofer, Sara Carniello, Volker Peters
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Patent number: 8227318Abstract: A method of forming an isolation region is provided that in one embodiment substantially reduces divot formation. In one embodiment, the method includes providing a semiconductor substrate, forming a first pad dielectric layer on an upper surface of the semiconductor substrate and forming a trench through the first pad dielectric layer into the semiconductor substrate. In a following process sequence, the first pad dielectric layer is laterally etched to expose an upper surface of the semiconductor substrate that is adjacent the trench, and the trench is filled with a trench dielectric material, wherein the trench dielectric material extends atop the upper surface of the semiconductor substrate adjacent the trench and abuts the pad dielectric layer.Type: GrantFiled: November 19, 2009Date of Patent: July 24, 2012Assignee: International Business Machines CorporationInventors: Max Levy, Natalie Feilchenfeld, Richard Phelps, BethAnn Rainey, James Slinkman, Steven H. Voldman, Michael Zierak, Hubert Enichlmair, Martin Knaipp, Bernard Loeffler, Rainer Minixhofer, Jong-Mun Park, Georg Roehrer
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Publication number: 20120104605Abstract: A chip design (1) comprising an external supply connection (VBAT), an internal supply connection (VDD), an integrated circuit (2) that is coupled to the internal supply connection (VDD) for voltage supply, and a fuse (3) that electrically connects the internal supply connection (VBAT) and is arranged within the chip design (1).Type: ApplicationFiled: November 23, 2009Publication date: May 3, 2012Applicant: AUSTRIAMICROSYSTEMS AGInventors: Karl Ilzer, Rainer Minixhofer, Mario Manninger