Patents by Inventor Rainer Moeller

Rainer Moeller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12328567
    Abstract: A head-related transfer function is calculated using features of the person, detected via cameras. The features are detected temporally at least partially in succession by several cameras. At least one of the cameras is arranged so that it detects the person when approaching and opening the vehicle in the area external to the vehicle.
    Type: Grant
    Filed: May 22, 2023
    Date of Patent: June 10, 2025
    Assignee: MERCEDES-BENZ GROUP AG
    Inventor: Rainer Moeller
  • Publication number: 20250175757
    Abstract: A head-related transfer function is calculated using features of the person, detected via cameras. The features are detected temporally at least partially in succession by several cameras. At least one of the cameras is arranged so that it detects the person when approaching and opening the vehicle in the area external to the vehicle.
    Type: Application
    Filed: May 22, 2023
    Publication date: May 29, 2025
    Inventor: Rainer MOELLER
  • Patent number: 8211323
    Abstract: The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.
    Type: Grant
    Filed: June 14, 2006
    Date of Patent: July 3, 2012
    Assignees: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V., Centrotherm Photovoltaics AG
    Inventors: Moritz Heintze, Rainer Moeller, Harald Wanka, Elena Lopez, Volkmar Hopfe, Ines Dani, Milan Rosina
  • Publication number: 20100062608
    Abstract: The invention relates to a method for the selective plasmochemical dry-etching of phosphosilicate glass ((SiO2)xP2O5)y) formed on surfaces of silicon wafers. In this respect, it is the object of the invention to provide a cost-effective, efficient, selective possibility which at least reduces manufacturing losses and with which phosphosilicate glass can be removed from silicon wafers. A procedure is followed in the invention that crystalline silicon wafers, whose surface is provided with phosphosilicate glass, are etched in a selective plasmochemical process. In this connection, a plasma formed using a plasma source and an etching gas are directed at atmospheric pressure to the phosphosilicate glass which can thus be removed.
    Type: Application
    Filed: August 29, 2007
    Publication date: March 11, 2010
    Inventors: Volkmar Hopfe, Ines Dani, Elena Lopez, Rainer Moeller, Moritz Heintze
  • Publication number: 20090071535
    Abstract: Disclosed is an antireflective coating on solar cells made of crystalline silicon as well as a method for producing such an antireflective coating. The aim is to create an antireflective coating on solar cells made of crystalline silicon which makes it possible to optimize the optical and passivating properties thereof while making it possible to easily and economically integrate the production thereof into the production process especially of very thin crystalline silicon solar cells. The antireflective coating is composed of successive partial layers, i.e., a lower partial layer which covers the crystalline silicon, is embodied as an antireflective coating and as passivation with a particularly great hydrogen concentration, and is covered by an upper partial layer having an increased barrier effect against hydrogen diffusion.
    Type: Application
    Filed: November 2, 2006
    Publication date: March 19, 2009
    Applicant: Centrotherm Photovoltaics AG
    Inventors: Rainer Moeller, Robert Michael Hartung, Harald Wanka
  • Publication number: 20080305643
    Abstract: The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.
    Type: Application
    Filed: June 14, 2006
    Publication date: December 11, 2008
    Inventors: Moritz Heintze, Rainer Moeller, Harald Wanka, Elena Lopez, Volkmar Hopfe, Ines Dani, Milan Rosina