Abstract: A pattern with small, densely packed structures is transferred from a structure carrier to an object. At least two partial patterns of less densely packed structure contents are produced from the densely packed structures in that those structures which are arranged close beside one another in the pattern on the structure carrier are assigned to various partial patterns if possible and separated from one another as a result. The partial patterns are then transferred to the object with a time offset and the structures are combined again as a result. This achieves a reduction in the structure density during the optical imaging process, so that the influence of disruptive structure interference on the imaging is reduced and thus denser structures can be imaged at the same wavelength.

Abstract: An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180° ±&Dgr; &agr;, whereby &Dgr; &agr; a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

Abstract: For lithographically producing the smallest structures at less than the exposure wavelengths in semiconductor fabrication, a double exposure is carried out using a thick phase mask and a trimming mask, the trimming mask further structures the phase-contrast lines produced by the phase mask. Besides transparent or opaque regions, the trimming mask also has phase-shifting regions. These surround transparent regions of the trimming mask through which the phase-contrast lines produced by the first mask are locally re-exposed, that is to say interrupted. The intensity profile of successive line sections is especially rich in contrast through the addition of the phase-shifting partially transparent regions on the second mask; the distances between the line sections can be reduced. The trimming mask, otherwise used only for larger structures, is therefore suitable for the configuration of the finest dimensionally critical structures.

Abstract: A pattern with small, densely packed structures is transferred from a structure carrier to an object. At least two partial patterns of less densely packed structure contents are produced from the densely packed structures in that those structures which are arranged close beside one another in the pattern on the structure carrier are assigned to various partial patterns if possible and separated from one another as a result. The partial patterns are then transferred to the object with a time offset and the structures are combined again as a result. This achieves a reduction in the structure density during the optical imaging process, so that the influence of disruptive structure interference on the imaging is reduced and thus denser structures can be imaged at the same wavelength.

Abstract: A mask contains a transparent carrier material on which an opaque region is disposed as an image structure. Also disposed on the carrier material is a semitransparent dummy structure, which is spaced apart from all the image structures and differs from the image structure in terms of transparency and phase rotation. The smallest lateral extent of the dummy structure is then selected to be at least half as large as the smallest lateral extent of the image structure. The semitransparent dummy structure is formed in such a way that it is suitable for increasing the depth of focus of structures that stand individually or at least partially individually, in order thereby to improve the process window of the optical projection.

Abstract: The phase mask is provided for illuminating a photo-sensitive layer in a photolithography process for producing integrated circuits with a predetermined pattern of optically transmissive regions. The phase mask is configured, in zones in which the distances between neighboring regions in at least one geometrical direction are less than a predetermined limiting distance, in each case as an alternating phase mask. The zones with isolated contact windows are in each case configured as a halftone phase mask or a chromeless phase mask.

Abstract: In an optical projection system for use in projection printing of masks to wafers, comprising an illumination system including a light source and a mask positioned in the optical path of the illumination system, an optical phase structure is positioned in the optical path between the light source and the mask. The phase structure comprises a pattern of distributed transparent features having at least one refractive index, the transparent features of said phase structure being related in position and orientation to the opaque features of the mask.

Abstract: The system comprises a latent image detection device comprising an alignment device which uses non-actinic radiation (10) and which is intended for aligning the mask pattern with respect to the substrate (3) and is designed for detecting the measure of coincidence of a mask alignment feature and a substrate alignment feature (8). The alignment device is provided with a radiation-sensitive detection system (6) which is connected to an electronic signal circuit in which the amplitude of the radiation incident on the detection system is determined, which originates from a latent image, formed in the photosensitive layer, of a mask feature, in which a spatial frequency occurs which is approximately equal to the useful resolving power of the projection lens system and considerably greater than the resolving power of the alignment device.