Abstract: The invention relates to a device and a method for producing resist profiled elements. According to the invention, an electron beam lithography system is used to produce an electron beam, the axis of the beam being essentially perpendicular to a resist layer in which the resist profiled element is to be produced. The electron beam can be adjusted in terms of the electron surface dose in such a way that a non-orthogonal resist profiled element can be produced as a result of the irradiation by the electron beam.

Abstract: The invention relates to a device and a method for producing resist profiled elements. According to the invention, an electron beam lithography system is used to produce an electron beam, the axis of the beam being essentially perpendicular to a resist layer in which the resist profiled element is to be produced. The electron beam can be adjusted in terms of the electron surface dose in such a way that a non-orthogonal resist profiled element can be produced as a result of the irradiation by the electron beam.

Abstract: In a method for forming, with the aid of an electron beam (6), a polyline on a substrate (4) coated with a radiation-sensitive resist, the electron beam (6) is directed onto a surface of the substrate (4) in the direction of a Z coordinate, and the substrate (4) is displaced relative to the electron beam (6) in an X-Y plane in individual steps. After each individual step of the displacement, the electron beam (6) acts with a predefined energy input on the substrate (4) during a halt in the displacement motion. The energy input for each individual step is determined as a function of the shape of the polyline ascertained from several preceding individual steps. Also described is a corresponding apparatus with which, using electron beam lithography, it is possible to form polylines with a very uniform line width. The method and apparatus are particularly suitable for writing curved polylines.

Abstract: The invention refers to the field of electron beam lithography, in particular to a method for directing an electron beam (6) onto a target position (Z) on the surface of a substrate, the substrate first being placed onto a movable stage (2) and the stage (2) then being displaced stepwise, in the X and/or Y coordinates of a Cartesian grid, until the target position (Z) is located at a spacing from the impact point (P) of the undeflected electron beam (6) which is smaller than the smallest step distance of the stage displacement system, and then the electron beam (6) is directed onto the target position (Z) by deflection. This results in a considerable increase in positioning accuracy in electron beam lithography. Positioning accuracies on the order of 0.1 nm to 0.05 are achievable. The method is suitable in particular for writing grating patterns in which the spacing between the individual grating lines must be maintained with high accuracy.

Abstract: In a method for forming, with the aid of an electron beam (6), a polyline on a substrate (4) coated with a radiation-sensitive resist, the electron beam (6) is directed onto a surface of the substrate (4) in the direction of a Z coordinate, and the substrate (4) is displaced relative to the electron beam (6) in an X-Y plane in individual steps. After each individual step of the displacement, the electron beam (6) acts with a predefined energy input on the substrate (4) during a halt in the displacement motion.

Abstract: The invention refers to the field of electron beam lithography, in particular to a method for directing an electron beam (6) onto a target position (Z) on the surface of a substrate, the substrate first being placed onto a movable stage (2) and the stage (2) then being displaced stepwise, in the X and/or Y coordinates of a Cartesian grid, until the target position (Z) is located at a spacing from the impact point (P) of the undeflected electron beam (6) which is smaller than the smallest step distance of the stage displacement system, and then the electron beam (6) is directed onto the target position (Z) by deflection.