Abstract: A subsea carrier (100) for transporting a fluid, e.g. CNG or crude, comprises a main body (101) for containing the fluid at a predetermined internal pressure, wherein the main body (101) preferably is made of concrete and designed to operate at a water depth where the external pressure substantially counteracts the internal pressure. The subsea carrier has a floating element (102) connected to the main body (101) by a stabilising cable (132), wherein the stabilising cable (132) comprises a first rope (321) for transmitting force and is attached to a first connector (134) that is movable with respect to the main body (101). A system wherein the subsea carrier is towed by a surface vessel (3) or is self-propelled and controlled remotely is also disclosed. The subsea carrier (100) reduces operational costs relative to subsea carriers with traditional control surfaces and ballasting systems at large cargo volumes, e.g. 150 000 m3 or more.

Abstract: A subsea tank element comprises at least one tank section (1), the tank section(s) forming a cylindrical concrete-tank (2) closed at its opposite ends by two end caps (12). The tank element further comprises a rectangular structure (3, 4, 5) surrounding the cylindrical tank (2), and a connection (150, 160) between the rectangular structure (3, 4, 5) and the cylindrical tank (2) permitting a motion of the wall of the cylindrical tank (2) within predetermined limits for deflection of the rectangular structure (3, 4, 5). Permanent ballast (6, 7) and a ballast tank (8) control buoyancy and ensure static stability. Post tensioning cables through channels 9 tie the parts into a tank element, and the tank elements into a system. Several applications, including a subsea barge, a subsea hydro-electric plant and a hovering storage tank assembly are disclosed.

Abstract: Apparatus for producing analysis samples for X-ray fluorescence spectroscopy that includes a crucible holder that supports a crucible with sample material and a casting dish that is provided underneath the crucible. The crucible is tiltably mounted in the crucible holder and the crucible holder along with crucible holder and the casting dish is handled as a single unit for loading and unloading the oven. The oven has a floor on which the crucible holder is positioned upright, and the portion of the floor receiving the crucible holder is designed as a turntable which imparts oscillating rotational motion to the crucible holder and crucible holder. The method entails placing the crucible with the sample material in the crucible holder while they are outside the oven and then placing entire crucible unit loosely in the oven.

Abstract: Apparatus for producing analysis samples for X-ray fluorescence spectroscopy that includes a crucible holder that supports a crucible with sample material and a casting dish that is provided underneath the crucible. The crucible is tiltably mounted in the crucible holder and the crucible holder along with crucible holder and the casting dish is handled as a single unit for loading and unloading the oven. The oven has a floor on which the crucible holder is positioned upright, and the portion of the floor receiving the crucible holder is designed as a turntable which imparts oscillating rotational motion to the crucible holder and crucible holder. The method entails placing the crucible with the sample material in the crucible holder while they are outside the oven and then placing entire crucible unit loosely in the oven.

Abstract: An illumination system is disclosed for use in a semiconductor wafer back side inspection assembly. The illumination system includes an illumination source that is configured to direct illumination toward a highly reflective and directionally reflective surface at an angle ? of about 45 degrees to about 75 degrees with respect to the surface.

Abstract: An illumination system is disclosed for use in a semiconductor wafer back side inspection assembly. The illumination system includes an illumination source that is configured to direct illumination toward a highly reflective and directionally reflective surface at an angle ? of about 45 degrees to about 75 degrees with respect to the surface.

Abstract: An improved method of laser marking semiconductor wafers is provided wherein undesirable subsurface damage to a silicon semiconductor wafer is avoided while providing a relative improvement in marking speed for a predetermined spot diameter. A laser pulse of a laser beam has a predetermined wavelength, pulse width, repetition rate, and energy. The method further includes irradiating a semiconductor wafer with the pulsed laser beam over a spot diameter to produce a machine readable mark on the semiconductor wafer. The mark has a mark depth. The pulse width is less than about 50 ns, and the step of irradiating irradiates over the spot diameter to produce a mark having a mark depth substantially less than about 10 microns.

Abstract: An improved method of laser marking semiconductor wafers is provided wherein undesirable subsurface damage to a silicon semiconductor wafer is avoided while providing a relative improvement in marking speed for a predetermined spot diameter. A laser pulse of a laser beam has a predetermined wavelength, pulse width, repetition rate, and energy. The method further includes irradiating a semiconductor wafer with the pulsed laser beam over a spot diameter to produce a machine readable mark on the semiconductor wafer. The mark has a mark depth. The pulse width is less than about 50 ns, and the step of irradiating irradiates over the spot diameter to produce a mark having a mark depth substantially less than about 10 microns.

Abstract: An improved method of laser marking semiconductor wafers is provided wherein undesirable subsurface damage to a silicon semiconductor wafer is avoided while providing a relative improvement in marking speed for a predetermined spot diameter. A laser pulse of a laser beam has a predetermined wavelength, pulse width, repetition rate, and energy. The method further includes irradiating a semiconductor wafer with the pulsed laser beam over a spot diameter to produce a machine readable mark on the semiconductor wafer. The mark has a mark depth. The pulse width is less than about 50 ns, and the step of irradiating irradiates over the spot diameter to produce a mark having a mark depth substantially less than about 10 microns.

Abstract: A method of calibrating a laser marking system includes calibrating a laser marking system in three dimensions. The step of calibrating includes storing data corresponding to a plurality of heights. A position measurement of a workpiece is obtained to be marked. Stored calibration data is associated with the position measurement. A method and system for calibrating a laser processing or marking system is provided. The method includes: calibrating a laser marker over a marking field; obtaining a position measurement of a workpiece to be marked; associating stored calibration data with the position measurement; relatively positioning a marking beam and the workpiece based on at least the associated calibration data; and calibrating a laser marking system in at least three degrees of freedom. The step of calibrating includes storing data corresponding to a plurality of positions and controllably and relatively positioning a marking beam based on the stored data corresponding to the plurality of positions.

Abstract: A method of calibrating a laser marking system includes calibrating a laser marking system in three dimensions. The step of calibrating includes storing data corresponding to a plurality of heights. A position measurement of a workpiece is obtained to be marked. Stored calibration data is associated with the position measurement. A method and system for calibrating a laser processing or marking system is provided. The method includes: calibrating a laser marker over a marking field; obtaining a position measurement of a workpiece to be marked; associating stored calibration data with the position measurement; relatively positioning a marking beam and the workpiece based on at least the associated calibration data; and calibrating a laser marking system in at least three degrees of freedom. The step of calibrating includes storing data corresponding to a plurality of positions and controllably and relatively positioning a marking beam based on the stored data corresponding to the plurality of positions.

Abstract: A system for semiconductor wafer marking is provided. The system includes: (a) a first positioning subsystem for positioning a laser marking field relative to a wafer, the positioning along a first direction; (b) an alignment vision subsystem; (c) a laser marker including a laser for marking a location within the marking field with a laser marking beam; (d) a calibration program for calibrating at least one subsystem of the system; and (e) a controller. The marking field is substantially smaller than the wafer, and the laser marker includes a scan lens for optically maintaining a spot formed by the beam on the wafer within an acceptable range about the location within the marking field so as to avoid undesirable mark variations associated with wafer sag or other variations in depth within the field.

Abstract: A laser scanning method and system for marking articles is provided wherein control is provided by a single central controller. The system includes a conveyor for conveying the articles in a first direction at a marking station. A conveyor controller controls the conveyor in response to conveyor control signals. A laser and an optical subsystem are optically coupled to the laser for generating a focused laser beam in response to laser control signals. A scan head includes a laser beam deflector for steering the focused laser beam along two substantially orthogonal intersecting axes at the marking station to mark a first predetermined region on at least one of the articles in response to deflection control signals.

Abstract: An improved method of laser marking semiconductor wafers is provided wherein undesirable subsurface damage to a silicon semiconductor wafer is avoided while providing a relative improvement in marking speed for a predetermined spot diameter. A laser pulse of a laser beam has a predetermined wavelength, pulse width, repetition rate, and energy. The method further includes irradiating a semiconductor wafer with the pulsed laser beam over a spot diameter to produce a machine readable mark on the semiconductor wafer. The mark has a mark depth. The pulse width is less than about 50 ns, and the step of irradiating irradiates over the spot diameter to produce a mark having a mark depth substantially less than about 10 microns.

Abstract: A method of calibrating a laser marking system includes calibrating a laser marking system in three dimensions. The step of calibrating includes storing data corresponding to a plurality of heights. A position measurement of a workpiece is obtained to be marked. Stored calibration data is associated with the position measurement. A method and system for calibrating a laser processing or marking system is provided. The method includes: calibrating a laser marker over a marking field; obtaining a position measurement of a workpiece to be marked; associating stored calibration data with the position measurement; relatively positioning a marking beam and the workpiece based on at least the associated calibration data; and calibrating a laser marking system in at least three degrees of freedom. The step of calibrating includes storing data corresponding to a plurality of positions and controllably and relatively positioning a marking beam based on the stored data corresponding to the plurality of positions.

Abstract: A laser scanning method and system for marking articles is provided wherein control is provided by a single central controller. The system includes a conveyor for conveying the articles in a first direction at a marking station. A conveyor controller controls the conveyor in response to conveyor control signals. A laser and an optical subsystem are optically coupled to the laser for generating a focused laser beam in response to laser control signals. A scan head includes a laser beam deflector for steering the focused laser beam along two substantially orthogonal intersecting axes at the marking station to mark a first predetermined region on at least one of the articles in response to deflection control signals.