Patents by Inventor Rainer Stowasser

Rainer Stowasser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor component having a highly doped quantum structure emitter
    Patent number: 11211512
    Abstract: A semiconductor device having a highly doped quantum structure emitter is disclosed. In an embodiment, the semiconductor device includes a quantum structure emitter. The quantum structure emitter includes of a first layer made of an undoped semiconductor material with a large band gap, a second, middle, highly doped layer made of a semiconductor material with a low band gap and a third, undoped layer made of a semiconductor material with a large band gap.
    Type: Grant
    Filed: November 22, 2018
    Date of Patent: December 28, 2021
    Assignee: AE 111 AUTARKE ENERGIE GMBH
    Inventors: Andreas Paul Schueppen, Rainer Stowasser
  • Semiconductor Component Having a Highly Doped Quantum Structure Emitter
    Publication number: 20200295215
    Abstract: A semiconductor device having a highly doped quantum structure emitter is disclosed. In an embodiment, the semiconductor device includes a quantum structure emitter. The quantum structure emitter includes of a first layer made of an undoped semiconductor material with a large band gap, a second, middle, highly doped layer made of a semiconductor material with a low band gap and a third, undoped layer made of a semiconductor material with a large band gap.
    Type: Application
    Filed: November 22, 2018
    Publication date: September 17, 2020
    Inventors: Andreas Paul Schueppen, Rainer Stowasser
  • Component with a semiconductor junction and method for the production thereof
    Patent number: 7898052
    Abstract: A component comprising a semiconductor junction (HU) is proposed which is formed from crystalline doped semiconductor layers. A semiconductor circuit (IC) is formed on the surface of the component, and a diode is formed internally and directly below the circuit. Integrated circuit and diode are connected to one another and formed and integrated diode component, in particular a photodiode array.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: March 1, 2011
    Assignee: Austriamicrosystems AG
    Inventors: Anton Prantl, Franz Schrank, Rainer Stowasser
  • Component with a Semiconductor Junction and Method for the Production Thereof
    Publication number: 20080211051
    Abstract: A component comprising a semiconductor junction (HU) is proposed which is formed from crystalline doped semiconductor layers. A semiconductor circuit (IC) is formed on the surface of the component, and a diode is formed internally and directly below the circuit. Integrated circuit and diode are connected to one another and formed and integrated diode component, in particular a photodiode array.
    Type: Application
    Filed: November 28, 2005
    Publication date: September 4, 2008
    Inventors: Anton Prantl, Franz Schrank, Rainer Stowasser
  • Semiconductor Substrate Comprising a Pn-Junction and Method For Producing Said Substrate
    Publication number: 20080197443
    Abstract: An SOI substrate comprising a carrier substrate, a dielectric layer and a semiconductor layer. A continuous pn junction is realized in the semiconductor layer, which pn junction can be produced by applying differently doped partial layers on the SOI substrate. In this way, it is possible to use an SOI substrate for producing semiconductor components and, in particular, rear side diodes.
    Type: Application
    Filed: November 9, 2005
    Publication date: August 21, 2008
    Inventors: Franz Schrank, Rainer Stowasser