Abstract: A method for operating a fuel delivery device of an internal combustion engine includes switching an electromagnetic actuating device of a volume control valve so as to set a delivery volume. An intensity of an energy that is supplied to the electromagnetic actuating device for switching purposes, in particular of a current supplied to the electromagnetic actuating device and/or a level of a voltage applied to the electromagnetic actuating device, depends at least intermittently on a rotational speed of the internal combustion engine.

Abstract: A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.

Abstract: The disclosure relates to a method for operating a fuel delivery device of an internal combustion engine, in which method an electromagnetic actuating device of a volume control valve is switched such as to set a delivery volume, wherein an intensity of an energy that is supplied to the electromagnetic actuating device for switching purposes, in particular of a current supplied to the electromagnetic actuating device and/or a level of a voltage applied to the electromagnetic actuating device, depends at least intermittently on a rotational speed of the internal combustion engine.

Abstract: A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.

Abstract: A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.

Abstract: A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.

Abstract: A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.

Abstract: A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.

Abstract: A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.

Abstract: The invention relates to a method for producing isocyanato-organosilane of general formula (I) R2R3R4Si—R1—N═C═O. According to said method, gaseous carbamato-organosilane of general formula (II) R2R3R4Si—R1—NH—CO—OR (II), wherein R represents a monovalent C1-C10 alkyl radical, R1 represents a bivalent C1-C6 hydrocarbon radical and R2, R3 and R4 respectively represent a methyl, ethyl, n-propyl, i-propyl, methoxy, ethoxy, n-propoxy or i-propoxy radical, is heated in the presence of a heterogeneous catalyst.

Abstract: The invention relates to a method for producing isocyanato-organosilane of general formula (I) R2R3R4Si—R1—N═C═O. According to said method, gaseous carbamato-organosilane of general formula (II) R2R3R4Si—R1—NH—CO—OR (II), wherein R represents a monovatlent C1-C10 alkyl radical, R1 represents a bivalent C1-C6 hydrocarbon radical and R2, R3 and R4 respectively represent a methyl, ethyl, n-propyl, i-propyl, methoxy, ethoxy, n-propoxy or i-propoxy radical, is heated in the presence of a heterogeneous catalyst.

Abstract: The liquid-crystalline organosiloxanes which contain dianhydrohexitol derivatives as chiral groups can be used in optical elements, for decorative purposes and as polarizing colored filters, in particular notch filters.

Abstract: The invention relates to compounds of the formula ##STR1## in which R.sup.3 is a hydrogen atom or a radical of the formulaR.sup.1 --R.sup.5 --O--(CH.sub.2).sub.y --,in which R.sup.1 is a halogen atom, a hydroxyl group, a C.sub.1 - to C.sub.18 -alkoxy group, a C.sub.1 - to C.sub.18 -alkyl group or a cholesteryl radical, R.sup.5 is a phenylene or biphenylene radical which may be linked to a phenylene radical via the --OOC-- group or a phenylene radical linked the --OOC-- group, y is an integer of from 3 to 12, R.sup.2 is selected from the group consisting of a radical of the formulaR.sup.6 --R.sup.1 and R.sup.7 --SiCH.sub.3).sub.2 H,where R.sup.6 is a single chemical bond or a phenylene, biphenylene or cyclohexylene racial or a phenylene radical linked to the --OOC-- or --COO-- radical or a phenylene radical linked to a cyclohexyl radical through the --OOC-- group, R.sup.

Abstract: The present invention relates to liquid-crystalline compounds and to a process for preparing liquid-crystalline polyorganosiloxanes having methacryloxy and/or acryloxy groups by the reaction of organosiloxanes having hydrogen atoms bonded directly to silicon atoms and/or organosilanes which can be condensed to form organosiloxanes having hydrogen atoms bonded directly to silicon atoms, with alkenes and/or alkynes having mesogenic groups, which comprises reacting in a first step the organosiloxanes with an alkene and/or alkyne having at least one non-enolic hydroxyl group protected by a protective group, and in a second step the protective group is removed and the hydroxyl group which is now free is esterified with (meth)acrylic acid, esters, anhydrides and/or halides thereof and thereafter optionally condensing the organosilanes to organosiloxanes.

Abstract: The present invention relates to compounds of the formula ##STR1## in which Z is a radical bonded to the benzene ring in the 2-, 3-, 5- or 6-position, namely a halogen atom, a cyano group or a hydroxyl group,n is 0, 1 or 2,R" is a radical of the formulaR'''--[Si(R*).sub.2 ](CH.sub.2).sub.y R""-- (9),in whichY is an integer from 4 to 18,R''' is as defined in the description,R* is identical or different, optionally substituted C.sub.1 - to C.sub.18 -hydrocarbon or hydrocarbonoxy radicals,R"" is a radical of the formula --(E).sub.z -- which is optionally bonded to the carboxy group via a phenylene or biphenylene radical, whereE is a divalent radical of the formula --O-- or --Si(R*).sub.2 --, andZ is the number 0 or 1, and the radicalR' is a halogen atom, a cyano radical, a cholesteryl radical, a radical as defined for R* or of the formula --C.sub.6 H.sub.4 --R**, andR** may have any meaning of R*, with the exception of an n-octyloxy or an n-decyloxy radical,and the preparation and use thereof.

Abstract: The present invention relates to compounds of the formula ##STR1## in which Z is a halogen atom, a cyano group or a hydroxyl group,n is 0, 1 or 2,R' is a radical of the formulaR'"--[Si(R*).sub.2 ].sub.x (CH.sub.2).sub.y R""-- (9),in whichx is the number 0 or 1,y is an integer from 1 to 18,R'"is a defined in the description,R* is identical or different, optionally substituted C.sub.1 - to C.sub.18 -hydrocarbon or hydrocarbonoxy radicals,R"" is a phenylene or biphenylene radical or a radical of the formula --E--, whereE is a divalent radical of the formula --O-- or --[Si(R*).sub.2 ].sub.z --, andz is the number 0 or 1,and the compounds contain at least one group of the formula --Si(R*).sub.2 -- per molecule, and the radicalR" is a cholesteryl radical, a radical as defined for R* or a radical of the formula --C.sub.6 H.sub.4 --R*,and the preparation and use thereof.

Abstract: The present invention relates to compounds of the formula ##STR1## in which Z is a halogen atom, a cyano group or a hydroxyl group,n is 0, 1 or 2,R' is a radical of the formulaR"'--[Si(R*).sub.2 ].sub.x (CH.sub.2).sub.y R""-- (9),in whichx is the number 0 or 1,y is an integer from 1 to 18,R"'is a defined in the description,R* is identical or different, optionally substituted C.sub.1 - to C.sub.18 -hydrocarbon or hydrocarbonoxy radicals,R"" is a phenylene or biphenylene radical or a radical of the formula --E--, whereE is a divalent radical of the formula --O-- or --[Si(R*).sub.2 ].sub.z --, andz is the number 0 or 1,and the compounds contain at least one group of the formula --Si(R*).sub.2 -- per molecule, and the radicalR" is a cholesteryl radical, a radical as defined for R* or a radical of the formula --C.sub.6 H.sub.4 --R*,and the preparation and use thereof.