Patents by Inventor Rainhald Sander

Rainhald Sander has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrically programmable memory cell and methods for programming and reading from such a memory cell
    Patent number: 7116583
    Abstract: The invention relates to an electrically programmable memory cell comprising a memory transistor having a source and a drain zone and also a storage electrode and a control electrode, and a selection transistor having a source and a drain zone and also a control electrode, the drain zones of the storage and selection transistors being electrically conductively connected to one another. In this case, the drain zone of the selection transistor has a connection zone and an intermediate zone doped more weakly than the connection zone, the intermediate zone being arranged between the connection zone and a channel zone of the selection transistor and serving, during the programming operation, for taking up a programming voltage and thus for protecting a control electrode insulation layer of the selection transistor.
    Type: Grant
    Filed: April 13, 2005
    Date of Patent: October 3, 2006
    Assignee: Infineon Technoloiges AG
    Inventors: Rainhald Sander, Andreas Meiser
  • Electrically programmable memory cell and methods for programming and reading from such a memory cell
    Publication number: 20050243594
    Abstract: The invention relates to an electrically programmable memory cell comprising a memory transistor having a source and a drain zone and also a storage electrode and a control electrode, and a selection transistor having a source and a drain zone and also a control electrode, the drain zones of the storage and selection transistors being electrically conductively connected to one another. In this case, the drain zone of the selection transistor has a connection zone and an intermediate zone doped more weakly than the connection zone, the intermediate zone being arranged between the connection zone and a channel zone of the selection transistor and serving, during the programming operation, for taking up a programming voltage and thus for protecting a control electrode insulation layer of the selection transistor.
    Type: Application
    Filed: April 13, 2005
    Publication date: November 3, 2005
    Inventors: Rainhald Sander, Andreas Meiser