Abstract: A method of forming a semiconductor assembly includes forming a set of through-silicon vias in a carrier wafer, where a layer of the carrier wafer includes integrated devices. A die is coupled to a top surface of the carrier wafer including the set of through-silicon vias using hybrid bonding. One or more connection layers of the die are coupled to one or more of the through-silicon vias and coupled to one or more of the integrated devices. A second wafer is coupled to a top surface of the die. An amount is removed from a bottom surface of the carrier wafer that is parallel to and opposite to the top surface of the carrier wafer to reveal a conductive portion of at least one of the through-silicon vias.

Abstract: A semiconductor package assembly includes a package interface. An interposer die has a first surface and a second surface opposite to the first surface, where the first surface of the interposer is die positioned on the package interface. The interposer die includes a plurality of conductive connections between the first surface and second surface. A chiplet includes a connectivity region having conductive pathways, with a first portion of the connectivity region coupled to a conductive connection of the interposer die and a second portion of the connectivity region cantilevered from the interposer die.

Abstract: A method for forming a semiconductor assembly that includes forming a first set of layers on a first wafer, where one or more layers of the first set includes one or more devices of the semiconductor assembly. The method further includes forming a second set of layers on a second wafer, where one or more layers of the second set include connections between one or more of the devices of the semiconductor assembly. The method additionally includes coupling a layer of the first set to a layer of the second set using metal to metal hybrid bonding.

Abstract: A semiconductor package assembly includes a die having a front surface and a back surface opposite to and parallel to the front surface. A first portion of a front surface of an interconnect die is coupled to a portion of the back surface of the die. The interconnect die includes a connectivity region that is coupled to one or more through-die vias in the die through the back surface of the die. A spacer component is coupled to a second portion of the front surface of the interconnect die. The spacer component includes conductive connections, with one or more of the conductive connections are coupled to the conductive pathways of the connectivity region of the interconnect die.

Abstract: A semiconductor package includes a first die, a second die, and an interconnect die coupled to a first plurality of through-die vias in the first die and a second plurality of through-die vias in the second die. The interconnect die provides communications pathways the first die and the second die.

Abstract: A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.

Abstract: A method for forming a core for a substrate that removes portions of a resist layer based on a pattern specifying widths of removed portions of the resist layer. The method forms a set of pillars by plating the remaining portions of the resist layer with a conductive material, so each pillar of the set has a perimeter plated with the conductive material. Additionally, each pillar of the set of pillars is encapsulated with a dielectric material. In some implementations, the dielectric material is an organic material.

Abstract: A disclosed method can include (i) positioning a first surface of a component of a semiconductor device on a first plated through-hole, (ii) covering, with a layer of dielectric material, at least a second surface of the component that is opposite the first surface of the component, (iii) removing a portion of the layer of dielectric material covering the second surface of the component to form at least one cavity, and (iv) depositing conductive material in the cavity to form a second plated through-hole on the second surface of the component. Various other apparatuses, systems, and methods are also disclosed.

Abstract: A semiconductor package includes a first mold layer at least partially encasing at least one photonic integrated circuit. A redistribution layer structure is fabricated on the first mold layer, the redistribution layer structure including dielectric material and conductive structures. A second mold layer at least partially encasing at least one semiconductor chip is fabricated on the redistribution layer structure. The redistribution layer structure provides electrical pathways between the at least one semiconductor chip and the at least one photonic integrated circuit. One or more voids are defined in the second mold layer in an area above an optical interface of the at least one photonic integrated circuit such that light is transmittable through dielectric material above the optical interface.

Abstract: A semiconductor package includes a first die, a second die, and an interconnect die coupled to a first plurality of through-die vias in the first die and a second plurality of through-die vias in the second die. The interconnect die provides communications pathways the first die and the second die.

Abstract: An electronic device can include a first die, a second die, and an interconnect. The first die or the second die has a principal function as a power module or a memory. The first die includes a first bond pad, and the second die includes a second bond pad. The device sides of the first and second dies are along the same sides as the first and second bond pads. In an embodiment, the first die and the second die are in a chip first, die face-up configuration. The first and the second bond pads are electrically connected along a first solderless connection that includes the interconnect. In another embodiment, each material within the electrical connection between the first and the second bond pads has a flow point or melting point temperature of at least 300° C.

Abstract: A semiconductor assembly includes a first die having a front side metallization layer. The semiconductor assembly also includes a second side having a front side metallization layer that is bonded to the front side metallization layer of the first die.

Abstract: A semiconductor package includes a first mold layer at least partially encasing at least one photonic integrated circuit. A redistribution layer structure is fabricated on the first mold layer, the redistribution layer structure including dielectric material and conductive structures. A second mold layer at least partially encasing at least one semiconductor chip is fabricated on the redistribution layer structure. The redistribution layer structure provides electrical pathways between the at least one semiconductor chip and the at least one photonic integrated circuit. One or more voids are defined in the second mold layer in an area above an optical interface of the at least one photonic integrated circuit such that light is transmittable through dielectric material above the optical interface.

Abstract: A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.

Abstract: A semiconductor device includes one or more active devices disposed between a processor die and a package substrate. The semiconductor device includes a first layer with a processor die, a second layer with one or more active devices, and a third layer with a package substrate, where the second layer is disposed between the first and third layers. The one or more active devices are semiconductor-based devices, such as voltage regulators, that participate in supplying power to the processor die and are electrically connected to the processor die using various connection configurations. The implementations use short path lengths for improved performance with a compact structure that avoids the use of edge wiring or interposers without occupying processor die space. Implementations include the use of through-silicon vias (TSVs) to provide short path lengths while reducing the number of connection resources used by the one or more power components.

Abstract: An electronic device includes a first integrated circuit die, a support structure, and a second integrated circuit die and may include a spacer. The support structure includes a circuit element. The support structure has a thickness of at least 110 microns. The spacer or second integrated circuit die includes a conductor. The spacer or second integrated circuit die is disposed between the first integrated circuit die and the support structure. The conductor is electrically coupled to the integrated circuit die or the circuit element of the support structure. The electronic device provides more flexibility to a designer by allowing a circuit element or circuit that occupies a significant area to be in the support structure.

Abstract: A semiconductor package includes a package substrate having a first surface and an opposing second surface, and further includes an integrated circuit (IC) die disposed at the second surface and having a third surface facing the second surface and an opposing fourth surface. The IC die has a first region comprising one or more metal layers and circuit components for one or more functions of the IC die and a second region offset from the first region in a direction parallel with the third and fourth surfaces. The semiconductor package further includes a voltage regulator disposed at the fourth surface in the second region and having an input configured to receive a supply voltage and an output configured to provide a regulated voltage, and also includes a conductive path coupling the output of the voltage regulator to a voltage input of circuitry of the IC die.

Abstract: In an implementation, a semiconductor chip device includes a first semiconductor chip that includes a first portion and a second portion. The first portion can be a higher heat producing portion and the second portion can be a lower heat producing portion. A second semiconductor chip is stacked on the first semiconductor chip over the second portion. A dummy component is stacked on the first semiconductor chip over the first portion. The dummy component includes a plurality of thermal pipes providing a thermal path from a first surface of the dummy component to an opposite second surface of the dummy component.

Abstract: A three-dimensional semiconductor package assembly includes a die. The die includes a plurality of through silicon vias (TSVs). The TSVs includes a first TSV and a second TSV. The first TSV supplies power from an active surface of the die to a back surface of the die. The assembly also includes a passive device coupled to the back surface of the die such that conductive contacts of the passive device electrically interface with the TSVs. The first passive device receives power through the first TSV and supplies power to the first die through the second TSV.

Abstract: A semiconductor package includes a substrate having opposing first and second surfaces as well as a semiconductor chip component disposed at the second surface and having third and fourth opposing surfaces. A package lid structure is affixed to the second surface of the substrate and the fourth surface of the semiconductor chip component, and has a planar component overlying the semiconductor chip component and having a fifth surface facing the fourth surface and an opposing sixth surface. The planar component includes an aperture extending between the fifth surface and the sixth surface so as to expose at least a portion of the fourth surface of the semiconductor chip component. A thermal exchange structure can be mounted on the package lid structure to form a thermal extraction pathway with the semiconductor die component via the aperture, either directly or via an interposing thermally conductive plate.