Abstract: A memory subsystem with error checking and scrubbing (ECS) logic on-device on the memory can adapt the rate of ECS operations in response to detection of errors in the memory when the memory device is in automatic ECS mode. The ECS logic can include an indication of rows of memory that have been offlined by the host. The ECS logic can skip the offlined rows in ECS operation counts. The ECS logic can include requests or hints by the host to have ECS operations performed. An internal address generator of the ECS logic can select between generated addresses and the hints. The system can allow a memory controller to detect multibit errors (MBEs) related to a specific address of the associated memory. When the detected MBEs indicate a pattern of errors, the memory controller triggers a row hammer response for the specific address.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises, a package substrate, an interposer on the package substrate, a first die cube and a second die cube on the interposer, wherein the interposer includes conductive traces for electrically coupling the first die cube to the second die cube, a die on the package substrate, and an embedded multi-die interconnect bridge (EMIB) in the package substrate, wherein the EMIB electrically couples the interposer to the die.

Abstract: The present invention is a system of retrofitting existing locker compartments with newer technology electronic locking devices that can provide controlled secure access to the compartments. The disclosed wireway lock mount supports the locking device and secures the lock wiring inside of the existing compartments. The locking devices are wired into the controlled secure access system for providing access to the compartments.

Abstract: A two-level main memory in which both volatile memory and persistent memory are exposed to the operating system in a flat manner and data movement and management is performed in cache line granularity is provided. The operating system can allocate pages in the two-level main memory randomly across the first level main memory and the second level main memory in a memory-type agnostic manner, or, in a more intelligent manner by allocating predicted hot pages in first level main memory and predicted cold pages in second level main memory. The cache line granularity movement is performed in a “swap” manner, that is, a hot cache line in the second level main memory is swapped with a cold cache line in first level main memory because data is stored in either first level main memory or second level main memory not in both first level main memory and second level main memory.

Abstract: The present invention is a secure work pod that is a flexibly private, moveable, personal office. The secure work pod allows a user to have visual and acoustic privacy in an otherwise open workspace. The secure pod is constructed of flat panels that are constructed in a workspace by connectors that allow for 90-degree connections of the panels. Panels may have windows for visibility inserted in the front and back panels. The windows may have semi-glazed windows for privacy or may be left open. The work pod has an acoustic door that provides privacy for the user. The secure work pods can be organized into small layouts having a few pods or in large layout “neighborhoods” having multiple work pods.

Abstract: A system can predict memory device failure through identification of correctable error patterns based on the memory architecture. The failure prediction can thus account for the circuit-level of the memory rather than the mere number or frequency of correctable errors. A failure prediction engine correlates hardware configuration of the memory device with correctable errors (CEs) detected in data of the memory device to predict an uncorrectable error (UE) based on the correlation.

Abstract: The technology disclosed herein comprises a processor; a memory to store data and a plurality of error correcting code (ECC) bits associated with the data; and a memory controller coupled to the memory, the memory controller to receive a write request from the processor and, when an access control field is selected in the write request, perform an exclusive OR (XOR) operation on the plurality of ECC bits and a fixed encoding pattern to generate a plurality of encoded ECC bits and store the data and the plurality of encoded ECC bits in the memory.

Abstract: The technology described herein includes a first plurality of bijection diffusion function circuits to diffuse data bits into diffused data bits and store the diffused data bits into a memory; an error correcting code (ECC) generation circuit to generate ECC bits for the data bits; and a second plurality of bijection diffusion function circuits to diffuse the ECC bits into diffused ECC bits and store the diffused ECC bits into the memory.

Abstract: A memory controller having an error checking and correction (ECC) circuitry can detect an error in data being read from memory and correct that error with a retry flow without needing to send another read to the memory for the data. The read data is stored in a read data buffer (RDB) at the memory controller when the read data is received from memory. The memory controller has an error detection path from the RDB to the host and an error correction path. Read data that has no errors can be sent directly to the host. Instead of flushing the RDB in response to the error detection, the memory controller executes a retry flow, where the RDB provides the read data to the error correction path for error correction.

Abstract: In one example, a system for managing encrypted memory comprises a processor to store a first MAC based on data stored in system memory in response to a write operation to the system memory. The processor can also detect a read operation corresponding to the data stored in the system memory, calculate a second MAC based on the data retrieved from the system memory, determine that the second MAC does not match the first MAC, and recalculate the second MAC with a correction operation, wherein the correction operation comprises an XOR operation based on the data retrieved from the system memory and a replacement value for a device of the system memory. Furthermore, the processor can decrypt the data stored in the system memory in response to detecting the recalculated second MAC matches the first MAC and transmit the decrypted data to cache thereby correcting memory errors.

Abstract: A memory subsystem includes memory devices with space dynamically allocated for improvement of reliability, availability, and serviceability (RAS) in the system. Error checking and correction (ECC) logic detects an error in all or a portion of a memory device. In response to error detection, the system can dynamically perform one or more of: allocate active memory device space for sparing to spare a failed memory segment; write a poison pattern into a failed cacheline to mark it as failed; perform permanent fault detection (PFD) and adjust application of ECC based on PFD detection; or, spare only a portion of a device and leave another portion active, including adjusting ECC based on the spared portion. The error detection can be based on bits of an ECC device, and error correction based on those bits and additional bits stored on the data devices.

Abstract: The present invention is a system of retrofitting existing locker compartments with newer technology electronic locking devices that can provide controlled secure access to the compartments. The disclosed wireway lock mount supports the locking device and secures the lock wiring inside of the existing compartments. The locking devices are wired into the controlled secure access system for providing access to the compartments.

Abstract: An apparatus and method to reduce bandwidth and latency associated with probabilistic caches.

Abstract: A circuit (500) includes an active filter (108), including an input, a first output, and a second output. The circuit includes a first capacitor (502a) having a first terminal and a second terminal. The first terminal of the first capacitor is coupled to the first output of the active filter, and the second terminal of the first capacitor is coupled to the input of the active filter. The first capacitor has a capacitance value. The circuit includes a capacitor bank (504a) having a first terminal and a second terminal. The first terminal of the capacitor bank is coupled to the second output of the active filter. The second terminal of the capacitor bank is coupled to the second terminal of the first capacitor and coupled to the input of the active filter. The capacitor bank has a capacitance that is equivalent to the capacitance value.

Abstract: The technology disclosed herein comprises a processor; a memory to store data and a plurality of error correcting code (ECC) bits associated with the data; and a memory controller coupled to the memory, the memory controller to receive a write request from the processor and, when an access control field is selected in the write request, perform an exclusive OR (XOR) operation on the plurality of ECC bits and a fixed encoding pattern to generate a plurality of encoded ECC bits and store the data and the plurality of encoded ECC bits in the memory.

Abstract: A memory subsystem with error checking and scrubbing (ECS) logic on-device on the memory can adapt the rate of ECS operations in response to detection of errors in the memory when the memory device is in automatic ECS mode. The ECS logic can include an indication of rows of memory that have been offlined by the host. The ECS logic can skip the offlined rows in ECS operation counts. The ECS logic can include requests or hints by the host to have ECS operations performed. An internal address generator of the ECS logic can select between generated addresses and the hints. The system can allow a memory controller to detect multibit errors (MBEs) related to a specific address of the associated memory. When the detected MBEs indicate a pattern of errors, the memory controller triggers a row hammer response for the specific address.

Abstract: An example apparatus includes: driver circuitry having a first terminal and a second terminal; and voltage control circuitry having a first terminal and a second terminal, the first terminal of the voltage control circuitry coupled to the first terminal of the driver circuitry, the second terminal of the voltage control circuitry coupled to the second terminal of the driver circuitry, the voltage control circuitry configured to supply an LED supply voltage.

Abstract: A method comprises generating, for a cacheline, a first tag and a second tag, the first tag and the second tag generated as a function of user data stored and metadata in the cacheline stored in a first memory device, and a multiplication parameter derived from a secret key, storing the user data, the metadata, the first tag and the second tag in the first cacheline of the first memory device; generating, for the cacheline, a third tag and a fourth tag, the third tag and the fourth tag generated as a function of the user data stored and metadata in the cacheline stored in a second memory device, and the multiplication parameter; storing the user data, the metadata, the third tag and the fourth tag in the corresponding cache line of the second memory device; receiving, from a requesting device, a read operation directed to the cacheline; and using the first tag, the second tag, the third tag, and the fourth tag to determine whether a read error occurred during the read operation.