Patents by Inventor Rajeev Krishna Vytla
Rajeev Krishna Vytla has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10680598Abstract: A device includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch. The active gate bias driver is configured to actively drive a voltage at the gate of the switch to a first bias voltage during a first dead time of the switch and actively drive the voltage at the gate of the switch to a second bias voltage during a second dead time of the switch. The second bias voltage is different from the first bias voltage.Type: GrantFiled: February 19, 2019Date of Patent: June 9, 2020Assignee: Infineon Technologies Americas Corp.Inventors: Rajeev-Krishna Vytla, Danish Khatri, Min Fang
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Publication number: 20190260368Abstract: A device includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch. The active gate bias driver is configured to actively drive a voltage at the gate of the switch to a first bias voltage during a first dead time of the switch and actively drive the voltage at the gate of the switch to a second bias voltage during a second dead time of the switch. The second bias voltage is different from the first bias voltage.Type: ApplicationFiled: February 19, 2019Publication date: August 22, 2019Inventors: Rajeev-Krishna Vytla, Danish Khatri, Min Fang
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Patent number: 10224918Abstract: A device is described that includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch and an active gate bias driver configured to actively drive a voltage at the gate of the switch to a bias voltage in response to receiving an indication to deactivate the switch. The bias voltage is less than the turn-on voltage and wherein the bias voltage is greater than a ground voltage of the gate driver.Type: GrantFiled: December 7, 2016Date of Patent: March 5, 2019Assignee: Infineon Technologies Americas Corp.Inventors: Rajeev-Krishna Vytla, Danish Khatri, Min Fang
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Patent number: 10164078Abstract: There are disclosed herein various implementations of a bipolar semiconductor device with multi-trench enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having an opposite, second conductivity type. The device also includes a first control trench extending through an inversion region having the second conductivity type, and further extending into the drift region, the first control trench being adjacent to cathode diffusions. In addition, the device includes first and second depletion trenches, each having a depletion electrode, the first depletion trench being situated between the second depletion trench and the first control trench. An enhancement region having the first conductivity type is localized in the drift region and extends from the first control trench to the first second depletion trench and further from the first depletion trench to the second depletion trench.Type: GrantFiled: March 18, 2016Date of Patent: December 25, 2018Assignee: Infineon Technologies Americas Corp.Inventors: Florin Udrea, Gianluca Camuso, Alice Pei-Shan Hsieh, Chiu Ng, Yi Tang, Rajeev Krishna Vytla, Canhua Li
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Patent number: 10115812Abstract: A semiconductor device includes a drift region of a first conductivity type, an anode region of a second conductivity type situated below the drift region, an inversion region of the second conductivity type situated above the drift region, an enhancement region of the first conductivity type situated between the drift region and the inversion region, first and second control trenches extending through the inversion region and the enhancement region into the drift region, each control trench being bordered by a cathode diffusion region of the first conductivity type, and a superjunction structure situated in the drift region between the first and the second control trenches so that the superjunction structure does not extend under either the first or the second control trench. The superjunction structure is separated from the inversion region by the enhancement region and includes alternating regions of the first and the second conductivity types.Type: GrantFiled: September 1, 2017Date of Patent: October 30, 2018Assignee: Infineon Technologies Americas Corp.Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
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Publication number: 20180159520Abstract: A device is described that includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch and an active gate bias driver configured to actively drive a voltage at the gate of the switch to a bias voltage in response to receiving an indication to deactivate the switch. The bias voltage is less than the turn-on voltage and wherein the bias voltage is greater than a ground voltage of the gate driver.Type: ApplicationFiled: December 7, 2016Publication date: June 7, 2018Inventors: Rajeev-Krishna Vytla, Danish Khatri, Min Fang
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Patent number: 9899477Abstract: An edge termination structure is disclosed. The edge termination structure includes an active cell in a semiconductor wafer, an edge termination region adjacent the active cell in the semiconductor wafer, where the edge termination region includes a recessed field oxide region and a termination charge region below the recessed field oxide region. The recessed field oxide region may be thermally grown in a recess in the semiconductor wafer. A top surface of the recessed field oxide region is substantially coplanar with a top surface of the semiconductor wafer. The active cell may include at least one insulated-gate bipolar transistor surrounded by the edge termination region in the semiconductor wafer. The termination charge region has a conductivity type opposite of that of the semiconductor wafer. The termination charge region is adjacent to at least one guard ring in the semiconductor wafer.Type: GrantFiled: July 2, 2015Date of Patent: February 20, 2018Assignee: Infineon Technologies Americas Corp.Inventors: Russell Turner, Rajeev Krishna Vytla, Luther-King Ngwendson, Nicholas Limburn
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Patent number: 9871128Abstract: There are disclosed herein various implementations of a bipolar semiconductor device with sub-cathode enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite the first conductivity type. The bipolar semiconductor device also includes first and second depletion trenches, each having a depletion electrode. In addition, the bipolar semiconductor device includes a first control trench situated between the first and second depletion trenches, the first control trench extending into the drift region and being adjacent to cathode diffusions. An enhancement region having the first conductivity type is localized in the drift region between the first control trench and one or both of the first and second depletion trenches. In one implementation, the bipolar semiconductor device may be an insulated-gate bipolar transistor (IGBT).Type: GrantFiled: March 18, 2016Date of Patent: January 16, 2018Assignee: Infineon Technologies Americas Corp.Inventors: Florin Udrea, Gianluca Camuso, Alice Pei-Shan Hsieh, Chiu Ng, Yi Tang, Rajeev Krishna Vytla, Canhua Li
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Publication number: 20180012983Abstract: A semiconductor device includes a drift region of a first conductivity type, an anode region of a second conductivity type situated below the drift region, an inversion region of the second conductivity type situated above the drift region, an enhancement region of the first conductivity type situated between the drift region and the inversion region, first and second control trenches extending through the inversion region and the enhancement region into the drift region, each control trench being bordered by a cathode diffusion region of the first conductivity type, and a superjunction structure situated in the drift region between the first and the second control trenches so that the superjunction structure does not extend under either the first or the second control trench. The superjunction structure is separated from the inversion region by the enhancement region and includes alternating regions of the first and the second conductivity types.Type: ApplicationFiled: September 1, 2017Publication date: January 11, 2018Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
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Patent number: 9831330Abstract: There are disclosed herein various implementations of a bipolar semiconductor device having a deep charge-balanced structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes a control trench extending through an inversion region having the second conductivity type into the drift region, and bordered by a cathode diffusion having the first conductivity type. In addition, the device includes a deep sub-trench structure situated under the control trench. The deep sub-trench structure includes one or more first conductivity regions having the first conductivity type and one or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the one or more second conductivity regions configured to substantially charge-balance the deep sub-trench structure.Type: GrantFiled: December 31, 2015Date of Patent: November 28, 2017Assignee: Infineon Technologies Americas Corp.Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
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Patent number: 9799725Abstract: There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes a gate trench extending through a base having the second conductivity type into the drift region. In addition, the IGBT includes a deep superjunction structure situated under the gate trench. The deep superjunction structure includes one or more first conductivity regions having the first conductivity type and two or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the two or more second conductivity regions configured to substantially charge-balance the deep superjunction structure.Type: GrantFiled: December 31, 2015Date of Patent: October 24, 2017Assignee: Infineon Technologies Americas Corp.Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
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Publication number: 20170271487Abstract: There are disclosed herein various implementations of a bipolar semiconductor device with sub-cathode enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite the first conductivity type. The bipolar semiconductor device also includes first and second depletion trenches, each having a depletion electrode. In addition, the bipolar semiconductor device includes a first control trench situated between the first and second depletion trenches, the first control trench extending into the drift region and being adjacent to cathode diffusions. An enhancement region having the first conductivity type is localized in the drift region between the first control trench and one or both of the first and second depletion trenches. In one implementation, the bipolar semiconductor device may be an insulated-gate bipolar transistor (IGBT).Type: ApplicationFiled: March 18, 2016Publication date: September 21, 2017Inventors: Florin Udrea, Gianluca Camuso, Alice Pei-Shan Hsieh, Chiu Ng, Yi Tang, Rajeev Krishna Vytla, Canhua Li
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Publication number: 20170271488Abstract: There are disclosed herein various implementations of a bipolar semiconductor device with multi-trench enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having an opposite, second conductivity type. The device also includes a first control trench extending through an inversion region having the second conductivity type, and further extending into the drift region, the first control trench being adjacent to cathode diffusions. In addition, the device includes first and second depletion trenches, each having a depletion electrode, the first depletion trench being situated between the second depletion trench and the first control trench. An enhancement region having the first conductivity type is localized in the drift region and extends from the first control trench to the first second depletion trench and further from the first depletion trench to the second depletion trench.Type: ApplicationFiled: March 18, 2016Publication date: September 21, 2017Inventors: Florin Udrea, Gianluca Camuso, Alice Pei-Shan Hsieh, Chiu Ng, Yi Tang, Rajeev Krishna Vytla, Canhua Li
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Publication number: 20170271445Abstract: There are disclosed herein various implementations of a bipolar semiconductor device having localized enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite the first conductivity type. The bipolar semiconductor device also includes a first control trench extending through an inversion region having the second conductivity type, and further extending into the drift region, the first control trench being adjacent to cathode diffusions. In addition, the bipolar semiconductor device includes first and second depletion trenches, each having a depletion electrode, the first depletion trench being situated between the second depletion trench and the first control trench. An enhancement region having the first conductivity type is localized in the drift region between the first and second depletion trenches.Type: ApplicationFiled: March 18, 2016Publication date: September 21, 2017Inventors: Florin Udrea, Gianluca Camuso, Alice Pei-Shan Hsieh, Chiu Ng, Yi Tang, Rajeev Krishna Vytla, Canhua Li
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Patent number: 9768284Abstract: There are disclosed herein various implementations of a bipolar semiconductor device having a charge-balanced inter-trench structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes first and second control trenches extending through an inversion region having the second conductivity type into the drift region, each of the first and second control trenches being bordered by a cathode diffusion having the first conductivity type. In addition, the device includes an inter-trench structure situated in the drift region between the first and second control trenches.Type: GrantFiled: December 31, 2015Date of Patent: September 19, 2017Assignee: Infineon Technologies Americas Corp.Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
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Patent number: 9685506Abstract: There are disclosed herein implementations of an insulated-gate bipolar transistor (IGBT) having an inter-trench superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes first and second gate trenches extending through a base having the second conductivity type into the drift region, the first and second gate trenches each being bordered by an emitter diffusion having the first conductivity type. In addition, the IGBT includes an inter-trench superjunction structure situated in the drift region between the first and second gate trenches.Type: GrantFiled: December 31, 2015Date of Patent: June 20, 2017Assignee: Infineon Technologies Americas Corp.Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
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Publication number: 20160260799Abstract: There are disclosed herein implementations of an insulated-gate bipolar transistor (IGBT) having an inter-trench superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes first and second gate trenches extending through a base having the second conductivity type into the drift region, the first and second gate trenches each being bordered by an emitter diffusion having the first conductivity type. In addition, the IGBT includes an inter-trench superjunction structure situated in the drift region between the first and second gate trenches.Type: ApplicationFiled: December 31, 2015Publication date: September 8, 2016Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
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Publication number: 20160260823Abstract: There are disclosed herein various implementations of a bipolar semiconductor device having a deep charge-balanced structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes a control trench extending through an inversion region having the second conductivity type into the drift region, and bordered by a cathode diffusion having the first conductivity type. In addition, the device includes a deep sub-trench structure situated under the control trench. The deep sub-trench structure includes one or more first conductivity regions having the first conductivity type and one or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the one or more second conductivity regions configured to substantially charge-balance the deep sub-trench structure.Type: ApplicationFiled: December 31, 2015Publication date: September 8, 2016Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
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Publication number: 20160260824Abstract: There are disclosed herein various implementations of a bipolar semiconductor device having a charge-balanced inter-trench structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes first and second control trenches extending through an inversion region having the second conductivity type into the drift region, each of the first and second control trenches being bordered by a cathode diffusion having the first conductivity type. In addition, the device includes an inter-trench structure situated in the drift region between the first and second control trenches.Type: ApplicationFiled: December 31, 2015Publication date: September 8, 2016Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
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Publication number: 20160260825Abstract: There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes a gate trench extending through a base having the second conductivity type into the drift region. In addition, the IGBT includes a deep superjunction structure situated under the gate trench. The deep superjunction structure includes one or more first conductivity regions having the first conductivity type and two or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the two or more second conductivity regions configured to substantially charge-balance the deep superjunction structure.Type: ApplicationFiled: December 31, 2015Publication date: September 8, 2016Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla