Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

Abstract: The invention relates in part to a growth model for the growth of Group III-Group V (III-V) alloys by molecular beam epitaxy (MBE) based on the kinetics of adsorption, desorption, incorporation, anion exchange, anion-assisted removal, and surface droplet accumulation of the Group V elements. The invention also relates to methods to optimize MBE growth conditions used to produce a target III-V alloy composition. The invention is further related to methods of predicting III-V alloy compositions resulting from a set of MBE growth conditions.