Patents by Inventor Rajeevakumar V. Thekkemadathil

Rajeevakumar V. Thekkemadathil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • REPLACEMENT-GATE-COMPATIBLE PROGRAMMABLE ELECTRICAL ANTIFUSE
    Publication number: 20120249160
    Abstract: After planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. A first conductive material layer and an amorphous metal oxide are deposited into the recess area. A second conduct material layer fills the recess. After planarization, an electrical antifuse is formed within the filled recess area, which includes a first conductive material portion, an amorphous metal oxide portion, and a second conductive material portion. To program the electrical antifuse, current is passed between the two terminals in the pair of the conductive contacts to transform the amorphous metal oxide portion into a crystallized metal oxide portion, which has a lower resistance. A sensing circuit determines whether the metal oxide portion is in an amorphous state (high resistance state) or in a crystalline state (low resistance state).
    Type: Application
    Filed: June 14, 2012
    Publication date: October 4, 2012
    Applicants: FREESCALE SEMICONDUCTOR, INC., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Satya N. Chakravarti, Dechao Guo, Chuck T. Le, Byoung W. Min, Rajeevakumar V. Thekkemadathil, Keith Kwong Hon Wong
  • REPLACEMENT-GATE-COMPATIBLE PROGRAMMABLE ELECTRICAL ANTIFUSE
    Publication number: 20110012629
    Abstract: After planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. A first conductive material layer and an amorphous metal oxide are deposited into the recess area. A second conduct material layer fills the recess. After planarization, an electrical antifuse is formed within the filled recess area, which includes a first conductive material portion, an amorphous metal oxide portion, and a second conductive material portion. To program the electrical antifuse, current is passed between the two terminals in the pair of the conductive contacts to transform the amorphous metal oxide portion into a crystallized metal oxide portion, which has a lower resistance. A sensing circuit determines whether the metal oxide portion is in an amorphous state (high resistance state) or in a crystalline state (low resistance state).
    Type: Application
    Filed: July 15, 2009
    Publication date: January 20, 2011
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, FREESCALE SEMICONDUCTOR, INC.
    Inventors: Satya N. Chakravarti, Dechao Guo, Chuck T. Le, Byoung W. Min, Rajeevakumar V. Thekkemadathil, Keith Kwong Hon Wong