Abstract: Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or “inactive” side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

Abstract: Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or “inactive” side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

Abstract: Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or “inactive” side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

Abstract: Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or “inactive” side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

Abstract: An apparatus and system, as well as fabrication methods therefor, may include a unitary, substantially uniformly distributed transfer material coupled to a carrier material.

Abstract: An apparatus and system, as well as fabrication methods therefor, may include a unitary, substantially uniformly distributed transfer material coupled to a carrier material.

Abstract: A die with flip chip bumps including at least one layer of filled underfill on the die surface and a layer of unfilled underfill over the filled underfill and the flip chip bumps. An IC assembly including a substrate with bumps and at least one layer of filled underfill on the substrate surface and a layer of unfilled underfill over the filled underfill and the bumps. A die or IC assembly with a plurality of filled underfill layers with differing CTE. Methods of making the dies and IC assemblies.

Abstract: An apparatus and system, as well as fabrication methods therefor, may include a unitary, substantially uniformly distributed transfer material coupled to a carrier material.

Abstract: A die with flip chip bumps including at least one layer of filled underfill on the die surface and a layer of unfilled underfill over the filled underfill and the flip chip bumps. An IC assembly including a substrate with bumps and at least one layer of filled underfill on the substrate surface and a layer of unfilled underfill over the filled underfill and the bumps. A die or IC assembly with a plurality of filled underfill layers with differing CTE. Methods of making the dies and IC assemblies.

Abstract: A die with flip chip bumps including at least one layer of filled underfill on the die surface and a layer of unfilled underfill over the filled underfill and the flip chip bumps. An IC assembly including a substrate with bumps and at least one layer of filled underfill on the substrate surface and a layer of unfilled underfill over the filled underfill and the bumps. A die or IC assembly with a plurality of filled underfill layers with differing CTE. Methods of making the dies and IC assemblies.

Abstract: A die with flip chip bumps including at least one layer of filled underfill on the die surface and a layer of unfilled underfill over the filled underfill and the flip chip bumps. An IC assembly including a substrate with bumps and at least one layer of filled underfill on the substrate surface and a layer of unfilled underfill over the filled underfill and the bumps. A die or IC assembly with a plurality of filled underfill layers with differing CTE. Methods of making the dies and IC assemblies.