Patents by Inventor Rajendra P. DAHAL
Rajendra P. DAHAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11677041Abstract: Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.Type: GrantFiled: June 22, 2015Date of Patent: June 13, 2023Assignee: Rensselaer Polytechnic InstituteInventors: Rajendra P. Dahal, Ishwara B. Bhat, Yaron Danon, James Jian-Qiang Lu
-
Patent number: 9922838Abstract: Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.Type: GrantFiled: February 10, 2015Date of Patent: March 20, 2018Assignee: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. Dahal, Ishwara B. Bhat, Tat-Sing Chow
-
Patent number: 9810794Abstract: Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate.Type: GrantFiled: June 22, 2015Date of Patent: November 7, 2017Assignee: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. Dahal, Ishwara B. Bhat, Yaron Danon, James Jian-Qiang Lu
-
Publication number: 20170170025Abstract: Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.Type: ApplicationFiled: February 10, 2015Publication date: June 15, 2017Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. DAHAL, Ishwara B. BHAT, Tat-Sing CHOW
-
Publication number: 20170139060Abstract: Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate.Type: ApplicationFiled: June 22, 2015Publication date: May 18, 2017Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. DAHAL, Ishwara B. BHAT, Yaron DANON, James Jian-Qiang LU
-
Publication number: 20170133543Abstract: Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.Type: ApplicationFiled: June 22, 2015Publication date: May 11, 2017Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. DAHAL, Ishwara B. BHAT, Yaron DANON, James Jian-Qiang LU
-
Patent number: 9406833Abstract: Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.Type: GrantFiled: September 10, 2015Date of Patent: August 2, 2016Assignee: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. Dahal, Jacky Kuan-Chih Huang, James J. Q. Lu, Yaron Danon, Ishwara B. Bhat
-
Publication number: 20150380593Abstract: Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.Type: ApplicationFiled: September 10, 2015Publication date: December 31, 2015Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. DAHAL, Jacky Kuan-Chih HUANG, James J.Q. LU, Yaron DANON, Ishwara B. BHAT
-
Patent number: 9151853Abstract: Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.Type: GrantFiled: November 7, 2013Date of Patent: October 6, 2015Assignee: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. Dahal, Jacky Kuan-Chih Huang, James J. Q. Lu, Yaron Danon, Ishwara B. Bhat
-
Publication number: 20140252520Abstract: Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.Type: ApplicationFiled: November 7, 2013Publication date: September 11, 2014Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. DAHAL, Jacky Kuan-Chih HUANG, James J.Q. LU, Yaron DANON, Ishwara B. BHAT