Patents by Inventor Rajesh Appat

Rajesh Appat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12015079
    Abstract: In one aspect, a method of fabricating a transistor includes depositing a first epitaxial layer; depositing a second epitaxial layer on the first epitaxial layer; forming a single termination trench in the second epitaxial layer; and filling the termination trench with a dielectric. A depth of the termination trench is greater than 10 microns. In another aspect, a transistor includes a first epitaxial layer; a second epitaxial layer on the first epitaxial layer; and a single termination trench in the second epitaxial layer. The termination trench is greater than 10 microns and is filled with a dielectric.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: June 18, 2024
    Assignee: Polar Semiconductor, LLC
    Inventors: Noel Hoilien, Peter West, Rajesh Appat
  • Publication number: 20230065066
    Abstract: In one aspect, a method of fabricating a transistor includes depositing a first epitaxial layer; depositing a second epitaxial layer on the first epitaxial layer; forming a single termination trench in the second epitaxial layer; and filling the termination trench with a dielectric. A depth of the termination trench is greater than 10 microns. In another aspect, a transistor includes a first epitaxial layer; a second epitaxial layer on the first epitaxial layer; and a single termination trench in the second epitaxial layer. The termination trench is greater than 10 microns and is filled with a dielectric.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Applicant: Polar Semiconductor, LLC
    Inventors: Noel Hoilien, Peter West, Rajesh Appat