Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

Abstract: A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.

Abstract: Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.

Abstract: A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.

Abstract: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.

Abstract: A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.

Abstract: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.