Abstract: Methods and systems for computer-based trading enhanced with market and historical data displayed on live screen. Users of the trading platform are able to view on their live screen of executed and pending orders, information about the market depth of a transmitted order, the current view of all transmitted orders and executed trades, historical view of all transmitted orders and executed trades, bond instrument details, execution prices for the various bond instruments, yield for the bond instruments, and spread for the bond instruments.

Abstract: Methods and apparatuses, including computer program products, are described for negotiating the price for a traded security. A security, and a bid or offer terms, are transmitted from at least one dealer to an investor. An indication of interest in purchasing the security is received from the investor and transmitted to at least one dealer. A first bid in response to the indication of interest is received from more than one dealer. The first bid is stored for at least one period of time. In the event that at least two of the stored bids are tied for best: a tie-breaking request is transmitted to each of the tied-for-best dealers, the stored bid for one or more of the tied-for-best dealers is updated with a second bid, the stored bids are transmitted to the investor, and an acceptance, a rejection, or a counter-offer is received from the investor.

Abstract: Methods and systems for computer-based incremental trading are provided. Owners of the top price/time priority orders are able to trade between each other multiple numbers of times prior to the expiration of a workup period, at which time the workup orders of all the users participating in the workup are matched. The workup period is private between the owners of the top price/time priority orders and the orders are allowed to be modified multiple times. When the workup period ends, orders are matched according to the original price/time priority.

Abstract: Methods and apparatuses, including computer program products, are described for negotiating the price for a traded security. A security, and a bid or offer terms, are transmitted from at least one dealer to an investor. An indication of interest in purchasing the security is received from the investor and transmitted to at least one dealer. A first bid in response to the indication of interest is received from more than one dealer. The first bid is stored for at least one period of time. In the event that at least two of the stored bids are tied for best: a tie-breaking request is transmitted to each of the tied-for-best dealers, the stored bid for one or more of the tied-for-best dealers is updated with a second bid, the stored bids are transmitted to the investor, and an acceptance, a rejection, or a counter-offer is received from the investor.

Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

Abstract: Price-based inquiry lists for financial interests are submitted, negotiated and traded between investors and dealers over a network or networks. An investor interface for display is provided to an investor. A dealer interface for display is provided to a plurality of dealers. The investor can create a price-based inquiry list via the investor interface containing a plurality of inquiries for a corresponding plurality of different financial interests and can transmit the price-based inquiry list to one or more selected dealers, where an established relationship exists between the investor and the dealers. One or more of the selected dealers may provide responses to the received price-based inquiry list, where the response contains one or more offers/bids on the plurality of inquiries contained in the inquiry list via the dealer interface. The respective offers/bids are displayed in the price-based inquiry list on the investor interface.

Abstract: Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process having a first process gas at a first temperature less than about 800 degrees Celsius; and annealing the oxide layer formed on the substrate in the presence of a second process gas and at a second temperature. The oxidation process may be a plasma or thermal oxidation process performed at a temperature of about 800 degrees Celsius or below. In some embodiments, the post oxidation annealing process may be a spike or soak rapid thermal process, a laser anneal, or a flash anneal performed at a temperature of at least about 700 degrees Celsius, at least about 800 degrees Celsius, or at least about 950 degrees Celsius.

Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

Abstract: In certain embodiments methods for depositing materials on substrates, and more particularly, methods for depositing dielectric layers, such as silicon oxides or silicon oxynitrides, on germanium substrates are provided. The methods involve depositing a barrier layer on the germanium substrate to prevent oxidation of the germanium substrate when forming a dielectric layer on the germanium substrate. In certain embodiments, a silicon layer is deposited on the germanium substrate to form a barrier layer. In certain embodiments, nitridation of the germanium substrate forms a GexNy layer which functions as a barrier layer. In certain embodiments, a silicon nitride layer is deposited on the germanium substrate to form a barrier layer.